SID9575 -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free DESCRIPTION The SID9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC / DC converters. FEATURES z z z Simple Drive Requirement Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS MARKING: 9575 G REF. A B C D E F D S Date Code Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction & Storage temperature Symbol Ratings Unit VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @ TC = 25°C -60 ±25 -15 -9.5 -45 36 0.29 -55~150 V V A A A W W / °C °C TJ, TSTG THERMAL DATA Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-June-2004 Rev. A Symbol Value Unit RθJC RθJA 3.5 110 °C / W °C / W Any changes of specification will not be informed individually. Page 1 of 4 SID9575 -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ BVDSS -60 - - ΔBVDSS / ΔTJ - -0.06 - VGS(th) -1.0 - -3.0 V VDS=VGS, ID= -250 uA Forward Trans-conductance gfs - 14 - S VDS = -10V, ID = -9A Gate-Source Leakage Current IGSS - - ±100 nA VGS = ±25V - - -1 - - -25 - - 90 - - 120 Qg - 17 27 Gate-Source Charge Qgs - 5 - Gate-Drain (“Miller”) Charge Qgd - 6 - Td(on) - 10 - Tr - 19 - Td(off) - 46 - Tf - 53 - Input Capacitance Ciss - 1660 2660 Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss - 100 - Symbol Min Typ VSD - - -1.2 V IS = -9A, VGS = 0 V Trr - 56 - ns IS = -9 A, VGS = 0V Qrr - 159 - nC dl/dt = 100 A / uS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain-Source Leakage Current (TJ=25℃) IDSS Drain-Source Leakage Current (TJ=150℃) Static Drain-Source On-Resistance Total Gate Charge 2 RDS(ON) 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Max Unit V Test Conditions VGS = 0, ID = -250 uA V / °C Reference to 25°C, ID = -1 mA uA mΩ VDS = -60 V, VGS = 0 VDS = -48 V, VGS = 0 VGS = -10 V, ID = -12A VGS = -4.5 V, ID = -9 A nC ID = -9 A VDS = -48 V VGS = -4.5 V nS VDS = -30 V ID = -9 A VGS = -10 V RG = 3.3 Ω RD = 3.3 Ω pF VGS = 0 V VDS = -25 V f = 1.0 MHz SOURCE-DRAIN DIODE Parameter 2 Forward On Voltage Reverse Recovery Time 2 Reverse Recovery Charge Notes: Max Unit Test Conditions 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2%. http://www.SeCoSGmbH.com/ 01-June-2004 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SID9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-June-2004 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SID9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (Cont’d) http://www.SeCoSGmbH.com/ 01-June-2004 Rev. A Any changes of specification will not be informed individually. Page 4 of 4