SSE55N03 55 A, 25 V, RDS(ON) 6 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE55N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. FEATURES z z z z Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching PACKAGE DIMENSIONS REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 4.40 4.80 c1 1.25 b 0.76 1.00 b1 1.17 1.45 1.47 c 0.36 0.50 L 13.25 14.25 D 8.60 9.00 e E 9.80 10.4 L1 2.60 2.89 L4 14.7 15.3 Ø 3.71 3.96 L5 6.20 6.60 A1 2.60 2.80 2.54 REF. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Drain Current,VGS@ 10V ID @Ta=25℃ 55 A Drain Current,VGS@ 10V ID @Ta=100℃ 35 A IDM 215 A PD @Tc=25℃ 62.5 W 0.5 W/°C 1 Pulsed Drain Current Total Power Dissipation Linear Derating Factor 2 Single Pulse Avalanche Energy EAS 240 mJ Single Pulse Avalanche Current IAS 31 A Tj, Tstg -55 ~ +150 °C Symbol Value Unit Operating Junction and Storage Temperature Range THERMAL DATA Parameter Thermal Resistance Junction-case Max. Rθj-case 2.0 °C/W Thermal Resistance Junction-ambient Max. Rθj-amb 62 °C/W 01-June-2005 Rev. A Page 1 of 4 SSE55N03 55 A, 25 V, RDS(ON) 6 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit BVDSS 25 - - V - 0.037 - VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 30 - S VDS=10V, ID=28A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=25V, VGS=0 - - 25 uA VDS=20V, VGS=0 - 4.5 6 - 7 9 Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage △ BVDSS/△Tj Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=150℃) Static Drain-Source On-Resistance3 IDSS RDS(ON) Test Conditions VGS=0, ID=250uA V/°C Reference to 25℃, ID=1mA mΩ VGS=10V, ID=30A VGS=4.5V, ID=30A Total Gate Charge3 Qg - 16.8 - Gate-Source Charge Qgs - 6 - Gate-Drain (“Miller”) Change Qgd - 4.9 - Td(on) - 15.1 - Tr - 4 - Td(off) - 45.2 - Tf - 7.6 - Input Capacitance Ciss - 2326 - Output Capacitance Coss - 331 - Reverse Transfer Capacitance Crss - 174 - Symbol Min. Typ. Max. Unit VSD - - 1.5 V IS=20A, VGS=0V, Tj=25°C IS - - 55 A VD= VG=0V, VS=1.5V Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time nC ID=28A VDS=20V VGS=5V ns VDS=15V ID=28A VGS=10V RG=3.3Ω RD=0.53Ω pF VGS=0V VDS=25V f=1.0MHz SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Reverse Recovery Charge Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A. 3. Pulse width≦300us, duty cycle≦2%. 01-June-2005 Rev. A Page 2 of 4 SSE55N03 Elektronische Bauelemente 55 A, 25 V, RDS(ON) 6 mΩ N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVE 01-June-2005 Rev. A Page 3 of 4 SSE55N03 Elektronische Bauelemente 55 A, 25 V, RDS(ON) 6 mΩ N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVE f=1.0MHz 01-June-2005 Rev. A Page 4 of 4