SECOS SSE55N03

SSE55N03
55 A, 25 V, RDS(ON) 6 mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSE55N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications
and suited for low voltage applications such as DC/DC converters.
FEATURES
z
z
z
z
Dynamic dv/dt Rating
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching
PACKAGE DIMENSIONS
REF.
Millimeter
Min.
Max.
REF.
Millimeter
Min.
Max.
A
4.40
4.80
c1
1.25
b
0.76
1.00
b1
1.17
1.45
1.47
c
0.36
0.50
L
13.25
14.25
D
8.60
9.00
e
E
9.80
10.4
L1
2.60
2.89
L4
14.7
15.3
Ø
3.71
3.96
L5
6.20
6.60
A1
2.60
2.80
2.54 REF.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
25
V
Gate-Source Voltage
VGS
±20
V
Drain Current,VGS@ 10V
ID @Ta=25℃
55
A
Drain Current,VGS@ 10V
ID @Ta=100℃
35
A
IDM
215
A
PD @Tc=25℃
62.5
W
0.5
W/°C
1
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
2
Single Pulse Avalanche Energy
EAS
240
mJ
Single Pulse Avalanche Current
IAS
31
A
Tj, Tstg
-55 ~ +150
°C
Symbol
Value
Unit
Operating Junction and Storage Temperature Range
THERMAL DATA
Parameter
Thermal Resistance Junction-case
Max.
Rθj-case
2.0
°C/W
Thermal Resistance Junction-ambient
Max.
Rθj-amb
62
°C/W
01-June-2005 Rev. A
Page 1 of 4
SSE55N03
55 A, 25 V, RDS(ON) 6 mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVDSS
25
-
-
V
-
0.037
-
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
30
-
S
VDS=10V, ID=28A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
1
uA
VDS=25V, VGS=0
-
-
25
uA
VDS=20V, VGS=0
-
4.5
6
-
7
9
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
△
BVDSS/△Tj
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25℃)
Drain-Source Leakage Current(Tj=150℃)
Static Drain-Source On-Resistance3
IDSS
RDS(ON)
Test Conditions
VGS=0, ID=250uA
V/°C Reference to 25℃, ID=1mA
mΩ
VGS=10V, ID=30A
VGS=4.5V, ID=30A
Total Gate Charge3
Qg
-
16.8
-
Gate-Source Charge
Qgs
-
6
-
Gate-Drain (“Miller”) Change
Qgd
-
4.9
-
Td(on)
-
15.1
-
Tr
-
4
-
Td(off)
-
45.2
-
Tf
-
7.6
-
Input Capacitance
Ciss
-
2326
-
Output Capacitance
Coss
-
331
-
Reverse Transfer Capacitance
Crss
-
174
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.5
V
IS=20A, VGS=0V, Tj=25°C
IS
-
-
55
A
VD= VG=0V, VS=1.5V
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=28A
VDS=20V
VGS=5V
ns
VDS=15V
ID=28A
VGS=10V
RG=3.3Ω
RD=0.53Ω
pF
VGS=0V
VDS=25V
f=1.0MHz
SOURCE-DRAIN DIODE
Parameter
Forward On Voltage2
Reverse Recovery Charge
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A.
3. Pulse width≦300us, duty cycle≦2%.
01-June-2005 Rev. A
Page 2 of 4
SSE55N03
Elektronische Bauelemente
55 A, 25 V, RDS(ON) 6 mΩ
N-Channel Enhancement Mode Power Mos.FET
CHARACTERISTIC CURVE
01-June-2005 Rev. A
Page 3 of 4
SSE55N03
Elektronische Bauelemente
55 A, 25 V, RDS(ON) 6 mΩ
N-Channel Enhancement Mode Power Mos.FET
CHARACTERISTIC CURVE
f=1.0MHz
01-June-2005 Rev. A
Page 4 of 4