STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ Ω P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ Ω N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TSOP-6 DESCRIPTION The STT6602 uses advanced trench technology to provide excellent on-resistance and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. A E L 6 1 2 3 F Low Gate Change Low On-resistance C REF. A B C D E F Date Code H J K DG MARKING 6602 4 B FEATURES 5 Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 PACKAGE INFORMATION REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. TOP VIEW Package MPQ Leader Size TSOP-6 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Ratings Parameter Symbol Unit N-Channel P-Channel Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 3.3 -2.3 2.6 -1.8 10 -10 Continuous Drain Current Pulsed Drain Current TA=25°C 2 TA=70°C 1 ID IDM Power Dissipation @TA=25°C PD Linear Derating Factor Operating Junction and Storage Temperature Range TJ, TSTG A A 1.14 W 0.01 W / °C -55~150 °C 110 °C / W Thermal Resistance Rating Maximum Junction to Ambient 2 RθJA Notes: 1. Pulse width limited by Max. junction temperature. 2. Surface mounted on 1 in2 copper pad of FR4 board, t≦5sec; 180°C / W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 7 STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ Ω P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ Ω N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static N-Ch Drain-Source Breakdown Voltage 30 - - -30 - - 1 - 2.5 -1 - -2.5 - 4 - - 2 - - - ±100 - - ±100 - - 1 - - -1 - - 25 P-Ch - - -25 VDS= -24V, VGS=0 N-Ch - - 65 VGS=10V, ID=3A - - 120 - - 90 - - 170 P-Ch N-Ch Gate-Threshold Voltage P-Ch N-Ch Forward Transconductance P-Ch Gate-Source Leakage Current N-Ch P-Ch BVDSS VGS(th) gfs IGSS N-Ch Drain-Source Leakage Current Drain-Source On-Resistance 1 P-Ch N-Ch P-Ch N-Ch IDSS RDS(ON) P-Ch N-Ch 1 Total Gate Charge P-Ch Gate-Source Charge P-Ch 1 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance P-Ch N-Ch Gate-Drain Charge Turn-on Delay Time N-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg - 3.1 - - 3 - - 1.2 - - 0.78 - - 1.6 - - 1.6 - - 3.3 - - 7 - - 2.5 - - 6 - - 13.2 - - 15 - - 1.7 - - 7.5 - - 200 - - 260 - - 40 - - 55 - - 20 - - 44 - - 2.3 3.0 - 4.3 5 VGS=0, ID=250µA V VGS=0, ID=-250µA VDS=VGS, ID=250µA V VDS=VGS, ID= -250µA VDS=5V, ID=3A S VDS= -5V, ID= -2A VGS= ±20V nA VGS= ±20V VDS=30 V, VGS=0 VDS= -30 V, VGS=0 uA VDS=24V, VGS=0 mΩ VGS= -10V, ID= -2A VGS=4.5V, ID=2A VGS= -4.5V, ID= -1A N-Channel VDS=25V, VGS= 4.5V, ID= 3A nC P-Channel VDS= -25V, VGS= -4.5V, ID= -2.0A N-Channel VDS= 15V, RG= 3.3Ω,RD=15Ω VGS= 10V, ID= 1A nS P-Channel VDS= -15V, RG= 3.3Ω,RD=15Ω VGS=-5V, ID= -1A N-Channel VGS=0, VDS=25V, f=1.0MHz pF P-Channel VGS=0, VDS=-25V, f=1.0MHz Ω f=1.0MHz Notes: 1. Pulse test http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 7 STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ Ω P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ Ω N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Source-Drain Diode Forward On Voltage 1 N-Ch VSD P-Ch Reverse Recovery Time N-Ch Trr P-Ch Reverse Recovery Charge N-Ch P-Ch Qrr - - 1.2 - - -1.2 - 14 - - 15 - - 7 - - 7 - V IS=0.9A, VGS=0 IS= -0.9A, VGS=0 ns IS=3A, VGS=0 ,dI/dt=100A/µs IS= -2A, VGS=0 ,dI/dt=100A/µs nC IS=3A, VGS=0 ,dI/dt=100A/µs IS= -2A, VGS=0 ,dI/dt=100A/µs Notes: 1. Pulse test http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 7 STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ Ω P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ Ω N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 7 STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ Ω P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ Ω N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 5 of 7 STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ Ω P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ Ω N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 6 of 7 STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ Ω P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ Ω N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 7 of 7