SSE75N03 75 A, 25 V, RDS(ON) 4.5 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. FEATURES z z z Low Gate Charge Simple Drive Requirement Fast Switching PACKAGE DIMENSIONS REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 4.40 4.80 c1 1.25 b 0.76 1.00 b1 1.17 1.45 1.47 c 0.36 0.50 L 13.25 14.25 D 8.60 9.00 e E 9.80 10.4 L1 2.60 2.89 L4 14.7 15.3 Ø 3.71 3.96 L5 6.20 6.60 A1 2.60 2.80 2.54 REF. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Drain Current,VGS@ 4.5V ID @Ta=25℃ 75 A Drain Current,VGS@ 4.5V ID @Ta=100℃ 62.5 A IDM 350 A PD @Tc=25℃ 96 W 0.76 W/°C 1 Pulsed Drain Current Total Power Dissipation Linear Derating Factor 2 Single Pulse Avalanche Energy EAS 400 mJ Single Pulse Avalanche Current IAS 40 A Tj, Tstg -55 ~ +150 °C Symbol Value Unit Operating Junction and Storage Temperature Range THERMAL DATA Parameter Thermal Resistance Junction-case Max. Rθj-case 1.3 °C/W Thermal Resistance Junction-ambient Max. Rθj-amb 62 °C/W 01-June-2005 Rev. A Page 1 of 4 SSE75N03 75 A, 25 V, RDS(ON) 4.5 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit BVDSS 25 - - V - 0.02 - VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 29 - S VDS=10V, ID=30A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=25V, VGS=0 - - 25 uA VDS=20V, VGS=0 - 3.7 4.5 - 6.0 7 Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current △ BVDSS/△Tj Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=150℃) Static Drain-Source On-Resistance3 IDSS RDS(ON) Test Conditions VGS=0, ID=250uA V/°C Reference to 25℃, ID=1mA mΩ VGS=10V, ID=40A VGS=4.5V, ID=30A Total Gate Charge3 Qg - 33 - Gate-Source Charge Qgs - 9 - Gate-Drain (“Miller”) Change Qgd - 15 - Td(on) - 10 - Tr - 80 - Td(off) - 37 - Tf - 85 - Input Capacitance Ciss - 2070 - Output Capacitance Coss - 990 - Reverse Transfer Capacitance Crss - 300 - Symbol Min. Typ. Max. Unit VSD - - 1.5 V IS=20A, VGS=0V Reverse Recovery Time TRR - 50 - Ns IS=30A, VGS=0V Reverse Recovery Charge QRR - 51 - nC dI/dt=100A/us Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time nC ID=30A VDS=20V VGS=4.5V ns VDS=15V ID=30A VGS=10V RG=3.3Ω RD=0.5Ω pF VGS=0V VDS=25V f=1.0MHz SOURCE-DRAIN DIODE Parameter Forward On Voltage2 3 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A. 3. Pulse width≦300us, duty cycle≦2%. 01-June-2005 Rev. A Page 2 of 4 SSE75N03 Elektronische Bauelemente 75 A, 25 V, RDS(ON) 4.5 mΩ N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVE 01-June-2005 Rev. A Page 3 of 4 SSE75N03 Elektronische Bauelemente 75 A, 25 V, RDS(ON) 4.5 mΩ N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVE f=1.0MHz 01-June-2005 Rev. A Page 4 of 4