BVDSS = 500 V RDS(on) typ = 1.2 Ω HFD5N50S / HFU5N50S ID = 4.0 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD5N50S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU5N50S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 500 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 4.0 A Drain Current – Continuous (TC = 100℃) 2.4 A IDM Drain Current – Pulsed 16 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25℃) * 2.5 W Power Dissipation (TC = 25℃) - Derate above 25℃ 48 W 0.38 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ (Note 1) Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 2.6 RθJA Junction-to-Ambient* -- 50 RθJA Junction-to-Ambient -- 110 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,OCT 2009 HFD5N50S/HFU5N50S OCT 2009 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 2.0 A -- 1.2 1.5 Ω VGS = 0 V, ID = 250 ㎂ 500 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.5 -- V/℃ VDS = 500 V, VGS = 0 V -- -- 1 ㎂ VDS = 400 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 640 830 ㎊ -- 86 111 ㎊ -- 11.5 15 ㎊ -- 12 35 ㎱ -- 46 100 ㎱ -- 50 110 ㎱ -- 48 105 ㎱ -- 15.5 20 nC -- 2.9 -- nC -- 6.4 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 250 V, ID = 5.0 A, RG = 25 Ω (Note 4,5) VDS = 400V, ID = 5.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 4.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 16 VSD Source-Drain Diode Forward Voltage IS = 4.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 263 -- ㎱ Qrr Reverse Recovery Charge IS = 5.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 1.9 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=21.5mH, IAS=5.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤4.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,OCT 2009 HFD5N50S/HFU5N50S Electrical Characteristics TC=25 °C HFD5N50S/HFU5N50S Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitance [pF] VGS, Gate-Source Voltage [V] 12 10 VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 ∗ Note : ID = 4.0A 0 0 4 8 12 16 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 20 ◎ SEMIHOW REV.A0,OCT 2009 HFD5N50S/HFU5N50S Typical Characteristics (continued) RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 2.0 A 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 102 5 10 µs 4 ID, Drain Current [A] 101 100 µs 1 ms 10 ms 100 ms DC 100 10-1 * Notes : 1. TC = 25 oC 3 2 1 2. TJ = 150 oC 3. Single Pulse 10-2 100 101 102 0 25 103 50 75 Figure 9. Maximum Safe Operating Area 100 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response ID, Drain Current [A] Operation in This Area is Limited by R DS(on) Figure 10. Maximum Drain Current vs Case Temperature D=0.5 0.2 * Notes : 1. ZθJC(t) = 2.6 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 0.05 10-1 0.02 0.01 PDM single pulse t1 -2 10 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,OCT 2009 HFD5N50S/HFU5N50S Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,OCT 2009 HFD5N50S/HFU5N50S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,OCT 2009 HFD5N50S/HFU5N50S Package Dimension TO-252 2.3±0.1 6.6±0.2 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 1±0.2 5.35±0.15 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 0.5+0.1 -0.05 2.3typ 2.3typ ◎ SEMIHOW REV.A0,OCT 2009 TO-251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ ◎ SEMIHOW REV.A0,OCT 2009 HFD5N50S/HFU5N50S Package Dimension