BVDSS = 600 V RDS(on) typ = 0.3 Ω HFH19N60 ID = 18.5 A 600V N-Channel MOSFET TO-3P FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 95 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.3 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 600 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 18.5 A Drain Current – Continuous (TC = 100℃) 11.7 A IDM Drain Current – Pulsed 74 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 1150 mJ IAR Avalanche Current (Note 1) 18.5 A EAR Repetitive Avalanche Energy (Note 1) 30 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 300 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 2.38 W/℃ -55 to +150 ℃ 300 ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθCS Case-to-Sink RθJA Junction-to-Ambient Typ. Max. -- 0.42 0.24 -- -- 40 Units ℃/W ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 OCT 2009 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 9.3 A -- 0.3 0.38 Ω VGS = 0 V, ID = 250 ㎂ 600 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.65 -- V/℃ VDS = 600 V, VGS = 0 V -- -- 10 ㎂ VDS = 480 V, TC = 125℃ -- -- 100 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 3700 4800 ㎊ -- 360 470 ㎊ -- 45 59 ㎊ -- 65 140 ㎱ -- 210 430 ㎱ -- 150 310 ㎱ -- 135 280 ㎱ -- 95 125 nC -- 18 -- nC -- 37 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 18.5 A, RG = 25 Ω (Note 4,5) VDS = 480V, ID = 18.5 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 18.5 ISM Pulsed Source-Drain Diode Forward Current -- -- 74 VSD Source-Drain Diode Forward Voltage IS = 18.5A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 420 -- ㎱ Qrr Reverse Recovery Charge IS = 18.5 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 4.7 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=6.2mH, IAS=18.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤18.5A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Electrical Characteristics TC=25 °C HFH19N60 ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] Figure 2. Transfer Characteristics VSD, Source-Drain Voltage [V] ID, Drain Current [A] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 7000 Capacitances [pF] 6000 Ciss 5000 4000 Coss 3000 ∗ Note ; 1. VGS = 0 V 2. f = 1 MHz 2000 Crss 1000 12 VDS = 120V VGS, Gate-Source Voltage [V] 8000 10 VDS = 300V VDS = 480V 8 6 4 2 * Note : ID = 18.5A 0 10-1 100 101 0 0 20 40 60 80 100 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Typical Characteristics (continued) BVDSS, (Normalized) Drain-Source Breakdown Voltage 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.5 1.0 * Note: 1. VGS=10V 2. ID=9.3A 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature[oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 20 ID, Drain Current [A] ID, Drain Current [A] 16 12 8 4 0 25 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature ZθJC(t), Thermal Response 100 D=0.5 -1 10 0.2 * Notes : 1. ZθJC(t) = 0.42 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 0.05 10-2 10-5 0.02 0.01 PDM single pulse t1 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,OCT 2009 HFH19N60 Package Dimension TO-3P 4.8±0.20 .20 1.5±0.20 18.7±0.20 ±0 .2 φ3 13.9±0.20 14.9±0.20 19.9±0.20 15.6±0.20 13.6±0.20 9.6±0.20 5.45typ 3.5±0.20 3±0.20 2±0.20 1±0.20 16.5±0.20 1.4±0.20 0.6±0.20 5.45typ ◎ SEMIHOW REV.A0,OCT 2009