SEMIKRON SEMIX402GAR066HDS_08

SEMiX402GAR066HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
600
V
Tc = 25 °C
509
A
Tc = 80 °C
383
A
400
A
ICnom
ICRM
SEMiX®2s
tpsc
Trench IGBT Modules
ICRM = 2xICnom
800
A
-20 ... 20
V
6
µs
-40 ... 175
°C
Tc = 25 °C
543
A
Tc = 80 °C
397
A
400
A
VGES
VCC = 360 V
VGE ≤ 15 V
Tj = 150 °C
VCES ≤ 600 V
Tj
Inverse diode
SEMiX402GAR066HDs
IF
Preliminary Data
Tj = 175 °C
IFnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
IFRM
IFRM = 2xIFnom
800
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1800
A
-40 ... 175
°C
Tc = 25 °C
543
A
Tc = 80 °C
397
A
400
A
800
A
Tj
Freewheeling diode
IF
Typical Applications
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Tj = 175 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
1800
A
-40 ... 175
°C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.45
1.9
V
Tj = 150 °C
1.70
2.1
V
IGBT
VCE(sat)
IC = 400 A
VGE = 15 V
chiplevel
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
VGE = 15 V
Tj = 25 °C
0.9
1
V
Tj = 150 °C
0.85
0.9
V
Tj = 25 °C
1.4
2.3
mΩ
Tj = 150 °C
2.1
3.0
mΩ
5.8
6.5
V
0.15
0.45
mA
VGE=VCE, IC = 6.4 mA
VGE = 0 V
VCE = 600 V
VCE = 25 V
VGE = 0 V
Tj = 25 °C
5
Tj = 150 °C
mA
f = 1 MHz
24.7
nF
f = 1 MHz
1.54
nF
f = 1 MHz
0.73
nF
QG
VGE = - 8 V...+ 15 V
3200
nC
RGint
Tj = 25 °C
1.00
Ω
GAR
© by SEMIKRON
Rev. 12 – 02.12.2008
1
SEMiX402GAR066HDs
Characteristics
Symbol
Conditions
td(on)
VCC = 300 V
IC = 400 A
Tj = 150 °C
RG on = 4.5 Ω
RG off = 4.5 Ω
tr
Eon
td(off)
tf
min.
Eoff
®
SEMiX 2s
Trench IGBT Modules
Rth(j-c)
per IGBT
Rth(j-s)
per IGBT
Inverse diode
VF = VEC IF = 400 A
VGE = 0 V
chiplevel
VF0
SEMiX402GAR066HDs
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
rF
Freewheeling diode
VF = VEC IF = 400 A
VGE = 0 V
chiplevel
VF0
rF
mJ
900
ns
65
ns
24
mJ
K/W
1.6
V
1.4
1.6
V
1
1.1
V
Tj = 150 °C
0.75
0.85
0.95
V
Tj = 25 °C
0.8
1.0
1.3
mΩ
1.4
1.6
mΩ
1.1
250
A
47
µC
10
mJ
0.15
K/W
K/W
Tj = 25 °C
1.4
1.6
V
Tj = 150 °C
1.4
1.6
V
Tj = 25 °C
0.9
1
1.1
V
Tj = 150 °C
0.75
0.85
0.95
V
Tj = 25 °C
0.8
1.0
1.3
mΩ
1.4
1.6
mΩ
Rth(j-s)
per diode
Err
22
0.9
Rth(j-c)
Qrr
ns
Tj = 25 °C
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 3700 A/µs T = 150 °C
j
VGE = -8 V
Tj = 150 °C
VCC = 300 V
per diode
IRRM
ns
125
1.4
Tj = 150 °C
per diode
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Tj = 25 °C
Rth(j-s)
Err
Unit
K/W
Rth(j-c)
Qrr
max.
150
0.12
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 3700 A/µs T = 150 °C
j
VGE = -8 V
T
j = 150 °C
VCC = 300 V
per diode
IRRM
typ.
1.1
250
A
47
µC
10
mJ
0.15
K/W
K/W
Module
LCE
RCC'+EE'
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
Mt
18
nH
0.7
mΩ
1
mΩ
0.045
K/W
3
5
Nm
2.5
5
Nm
Nm
w
250
g
Temperature sensor
R100
Tc=100°C (R25=5 kΩ)
0,493
±5%
kΩ
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
K
GAR
2
Rev. 12 – 02.12.2008
© by SEMIKRON
SEMiX402GAR066HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
© by SEMIKRON
Rev. 12 – 02.12.2008
3
SEMiX402GAR066HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
Rev. 12 – 02.12.2008
© by SEMIKRON
SEMiX402GAR066HDs
SEMiX 2s
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 12 – 02.12.2008
5