BAV19, BAV20, BAV21 SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage BAV19 BAV20 BAV21 VRRM 120 200 250 V Reverse Voltage BAV19 BAV20 BAV21 VR 100 150 200 V IF 250 mA IFRM 625 mA IFSM 9 3 1 A Ptot 500 mW RθJA 375 K/W RθJTP 240 K/W Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 175 O Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current at t = 1 µs at t = 100 µs at t = 1 s Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Tie-point 1) 1) 1) C C Lead length 10 mm SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007 BAV19, BAV20, BAV21 Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Reverse Current at VR = 100V at VR = 150V at VR = 200V at VR = 100 V, TA = 150 OC at VR = 150 V, TA = 150 OC at VR = 200 V, TA = 150 OC BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 Symbol Min. Max. Unit V(BR)R 120 200 250 - V - 100 100 100 100 100 100 nA nA nA µA µA µA IR Forward Voltage at IF = 100 mA at IF = 200 mA VF - 1 1.25 V Diode Capacitance at f = 1 MHz Cd - 5 pF Reverse Recovery Time at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω trr - 50 ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007 BAV19, BAV20, BAV21 Rverse voltage vs. reverse current Reverse current vs. reverse voltage 325 50 Reverse current, nA Reverse voltage, V Ta=25 C 300 Ta=25 C 40 30 20 10 275 0 3 5 10 20 30 Reverse current, 55 100 50 75 A 100 70 60 50 400 350 300 220 200 240 255 1 2 10 5 20 Forward current, Forward voltage vs. forward current 50 100 A Forward voltage vs. forward current 1.4 Ta=25 C 650 600 550 500 450 0.1 0.2 0.5 1 2 Forward current, mA 5 10 1.3 Ta=25 C 1.2 1.1 Forward voltage, V Forward voltage, mV Forward voltage, mV 155 175 195 250 180 Reverse voltage, V 725 700 135 Ta=25 C 450 90 Ta=25 C 80 Forward voltage, mV Reverse current, nA 115 Forward voltage vs. forward current Reverse current vs. reverse voltage 40 30 20 95 Reverse voltage, V 1 0.9 0.8 0.7 10 20 50 100 200 500 800 Forward current, mA SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007 BAV19, BAV20, BAV21 Forward voltage vs. ambient temperature Capacitance vs. reverse voltage Ta=25 C 800 Capacitance, pF Forward voltage, mV 1.3 Ta= -40 C 600 Ta=25 C 400 Ta=80 C 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 3 0 10 2 4 Forward current, mA 10 8 14 15 12 Reverse voltage, V Reverse recovery time vs. reverse recovery current Average rectified current & forward current vs. ambiebnt temperature 500 50 Fo rw ar dc 400 Current, mA Reverse recovery, nS 6 40 30 20 1.5 2 2.5 3 ur re nt s te a dy 200 100 IF=IR=30mA Rloop=100 Ohms 1 300 Aver ag 0 Reverse recovery current, mA e rec tified 50 sta te, mA curr ent, mA 100 150 Ambient temperature ( C) Power derating curve Power dissipation, mW 500 400 DO-35 Pkg 300 200 SOT-23 Pkg 100 0 50 100 150 200 Average temperature ( C) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007