BA157 THRU BA159 FAST SILICON RECTIFIERS Reverse Voltage – 400 to 1000 Volts Forward Current – 1.0 Ampere Features •Low forward voltage •High current capability •Low leakage current •High surge capability •Low cost Absolute Maximum Ratings (Ta = 25oC) BA157 BA158 BA159 Repetitive Peak Reverse Voltage Symbol Value Unit VRRM VRRM VRRM 400 600 1000 V V V Io 1 1) A IFSM 35 A Tj 125 O -65 to +125 O o Average Rectified Current at Tamb=50 C o Surge Forward Current, Half Cycle 50Hz, starting from Tj=25 C Junction Temperature Operating and Storage Temperature Range 1) TS C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2003 BA157 THRU BA159 FAST SILICON RECTIFIERS Characteristics at Tj=25oC Symbol Min. Typ. Max. Unit VF - - 1.3 V IR - - 5 μA Forward Voltage at IF=1A, Tj=25oC Leakage Current at VRRM, Tamb=25oC Capacitance at f=1MHz ,VR=4V BA157 Ctot - 15 - pF VR=4V BA158 Ctot - 15 - pF VR=4V BA159 Ctot - 15 - pF BA157 trr - - 300 ns IF=10mA, IR=10mA BA158 trr - - 300 ns IRR=1mA BA159 trr - - 500 ns BA157 trr - - 150 ns IF=0.5A, IR=1A BA158 trr - - 150 ns IRR=0.25A BA159 trr - - 250 ns RthA - - 251) K/W Reverse Recovery Time Reverse Recovery Time Thermal Resistance Junction to Ambient Air 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2003 BA157 THRU BA159 FAST SILICON RECTIFIERS Fig.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1-FORWARD CURRENT DERATING CURVE 35 PEAK FORWARD CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES 1.0 0.8 0.6 0.4 0.2 0 o TJ =55 C 8.3ms Single Half Sine-Wave 25 15 5 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, (o C) 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 INSTANTANEOUS FORWARD CURRENT AMPERES 10 o Tj=25 C Pulse Width=300 S 1% Duty Cycle 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE VOLTS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2003 BA157 THRU BA159 FAST SILICON RECTIFIERS Fig.5- TYPICAL JUNCTION CAPACITANCE 100 o 100 10 JUNCTION CAPACITANCE,pF INSTANTANEOUS REVERSE CURRENT, MICROAMPERES Fig.4- TYPICAL REVERSE CHARACTERISTICS TJ =100 oC 1 o TJ =25 C 0.1 Tj=25 C f=1.0MHz Vsig=50mVp-p 10 0 0.01 0 20 40 60 80 0.1 100 1 10 REVERSE VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% o TRANSIENT THERMAL IMPEDANCE, C/W Fig.6- TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 t, PULSE DURATION,sec. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2003 100