BC517 NPN Silicon Darlington Transistor Collector Base Emitter TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage VEBO 10 V IC 500 mA Ptot 625 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Collector Current Total Power Dissipation C C Characteristics (Ta = 25 OC) Parameter DC Current Gain at VCE = 2 V, IC = 20 mA Collector Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter On Voltage at VCE = 5 V, IC = 10 mA Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Cutoff Current at VCE = 30 V Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 10 V Current-Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Symbol Min. Typ. Max. Unit hFE 30,000 - - - VCEsat - - 1 V VBE(on) - - 1.4 V V(BR)CBO 40 - - V V(BR)CES 30 - - V V(BR)EBO 10 - - V ICES - - 500 nA ICBO - - 100 nA IEBO - - 100 nA fT - 200 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :15/06/2006