BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current IC 0.75 A Collector Peak Current (tp < 5 ms) ICM 1.5 A Base Current IB 0.4 A Base Peak Current IBM 0.75 A Total Dissipation Ptot 0.95 W Tj 150 O Tstg - 65 to + 150 O Operating Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit hFE hFE 10 5 30 20 - Collector Cutoff Current at VCB = 700 V ICBO - 250 µA Emitter Cutoff Current at VEB = 9 V IEBO - 1 mA Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 400 - V Collector Emitter Saturation Voltage at IC = 0.2 A, IB = 40 mA at IC = 0.3 A, IB = 75 mA at IC = 0.4 A, IB = 135 mA VCEsat - 0.5 1 1.5 Base Emitter Saturation Voltage at IC = 0.2 A, IB = 40 mA at IC = 0.3 A, IB = 75 mA VBEsat - 1 1.2 DC Current Gain at VCE = 5 V, IC = 0.2 A at VCE = 5 V, IC = 0.4 A V V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 16/09/2006 BV45 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 16/09/2006