SEMTECH_ELEC MMBTSB1690

MMBTSB1690
PNP Silicon Epitaxial Planar Transistors
for low frequency amplifier and driver applications
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
15
V
Collector Emitter Voltage
-VCEO
12
V
Emitter Base Voltage
-VEBO
6
V
-IC
2
A
Collector Current
1)
1)
-ICP
4
Power Dissipation
Ptot
200
Junction Temperature
TJ
150
O
Storage Temperature Range
Ts
-55 to +150
O
A
mW
C
C
Single pulse, Pw = 1 ms.
Characteristics at Tamb = 25 OC
Symbol
Min.
Typ.
Max.
Unit
hFE
270
-
680
-
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO
15
-
-
V
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-V(BR)CEO
12
-
-
V
-V(BR)EBO
6
-
-
V
-VCEsat
-
-
0.18
V
-ICBO
-
-
100
nA
-IEBO
-
-
100
nA
fT
-
360
-
MHz
Cob
-
15
-
pF
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 200 mA
Emitter Base Breakdown Voltage
at -IE= 10 µA
Collector Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
Collector Cutoff Current
at -VCB = 15 V
Emitter Cutoff Current
at -VEB = 6 V
Transition Frequency
at -VCE = 2 V, IE = 200 mA, f = 100 MHz
Collector Output Capacitance
at -VCB = 10 V, IE = 0 mA, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/01/2006
MMBTSB1690
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/01/2006