MMBTSC4075W NPN Silicon Epitaxial Planar Transistor For switching application. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Ptot 200 mW Tj 150 O Tstg - 55 to + 150 O Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 2 mA Current Gain Group C C Symbol Min. Max. Unit hFE hFE hFE hFE 70 120 200 350 140 240 400 700 - Collector Base Cutoff Current at VCB = 60 V ICBO - 0.1 µA Emitter Base Cutoff Current at VEB = 5 V IEBO - 0.1 µA VCE(sat) - 0.25 V fT 80 - MHz Cob - 3.5 pF O Y G L Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Transition Frequency at VCE = 10 V, IC = 1 mA Collector Output Capacitance at VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2009 MMBTSC4075W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2009