ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage V VEBO 6 Collector Current - DC Collector Current - Pulse 1) IC ICP Total Power Dissipation Ptot 3 5 1) 0.5 2 2) Junction Temperature TJ 150 O Storage Temperature Range TS - 55 to + 150 O 1) 2) A W C C Single pulse Pw = 10 ms. Mounted on a 40 X 40 X 0.7 mm ceramic substrate. Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE 180 270 - 390 560 - Collector Base Breakdown Voltage at IC = 50 μA V(BR)CBO 40 - - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 20 - - V Emitter Base Breakdown Voltage at IE = 50 μA V(BR)EBO 6 - - V ICBO - - 100 nA IEBO - - 100 nA VCE(sat) - - 0.5 V fT - 290 - MHz Cob - 25 - pF DC Current Gain at VCE = 2 V, IC = 100 mA Current Gain Group R S Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 2 A, IB = 100 mA Transition Frequency at VCE = 2 V, -IE = 500 mA, f = 100 MHz Collector Output Capacitance at VCE = 10 V, IE = 0 A, f = 1 MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/05/2007 ST 2SD2150U SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/05/2007 ST 2SD2150U SOT-89 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/05/2007