SEMTECH_ELEC MMBTSB1198

MMBTSB1198
PNP Silicon Epitaxial Planar Transistor
Low frequency transistor
The transistor is subdivided into two groups Q and
R, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
80
V
Collector Emitter Voltage
-VCEO
80
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
0.5
A
Collector Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
C
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
120
180
-
270
390
-
Collector Cutoff Current
at -VCB = 50 V
-ICBO
-
-
0.5
µA
Emitter Cutoff Current
at -VEB = 4 V
-IEBO
-
-
0.5
µA
Collector-Base Breakdown Voltage
at -IC = 50 µA
-VCBO
80
-
-
V
Emitter-Base Breakdown Voltage
at -IE = 50 µA
-VEBO
5
-
-
V
Collector-Emitter Breakdown Voltage
at -IC = 2 mA
-VCEO
80
-
-
V
Collector-Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VCE(sat)
-
-
0.5
V
Cob
-
11
-
pF
fT
-
180
-
MHz
DC Current Gain
at -VCE = 3 V, -IC = 100 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Transition Frequency
at -VCE = 10 V, IE = 50 mA, f = 100 MHz
Q
R
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/12/2005