MMBTSB1198 PNP Silicon Epitaxial Planar Transistor Low frequency transistor The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCEO 80 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 0.5 A Collector Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE 120 180 - 270 390 - Collector Cutoff Current at -VCB = 50 V -ICBO - - 0.5 µA Emitter Cutoff Current at -VEB = 4 V -IEBO - - 0.5 µA Collector-Base Breakdown Voltage at -IC = 50 µA -VCBO 80 - - V Emitter-Base Breakdown Voltage at -IE = 50 µA -VEBO 5 - - V Collector-Emitter Breakdown Voltage at -IC = 2 mA -VCEO 80 - - V Collector-Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA -VCE(sat) - - 0.5 V Cob - 11 - pF fT - 180 - MHz DC Current Gain at -VCE = 3 V, -IC = 100 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Transition Frequency at -VCE = 10 V, IE = 50 mA, f = 100 MHz Q R SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/12/2005