MMBTA92W PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 300 V Collector Emitter Voltage -VCEO 300 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 100 mA Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA at -VCE = 10 V, -IC = 30 mA Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Base Cutoff Current at -VCB = 200 V Emitter Base Cutoff Current at -VEB = 3 V Collector Emitter Saturation Voltage at -IC = 20 mA, -IB = 2 mA Base Emitter Saturation Voltage at -IC = 20 mA, -IB = 2 mA Transition Frequency at -VCE = 20 V, -IC = 10 mA, f = 100 MHz Collector Output Capacitance at -VCB = 20 V, f = 1 MHz Symbol Min. Max. Unit hFE hFE hFE 25 40 25 - - -V(BR)CBO 300 - V -V(BR)CEO 300 - V -V(BR)EBO 5 - V -ICBO - 250 nA -IEBO - 100 nA -VCE(sat) - 0.5 V -VBE(sat) - 0.9 V fT 50 - MHz Cob - 6 pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/11/2006