BFS20 NPN Silicon Epitaxial Planar Transistor High frequency transistor for IF and VHF applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 4 V Collector Current IC 25 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 65 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 7 mA Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 4 V Base Emitter Voltage at VCE = 10 V, IC = 7 mA Transition Frequency at VCE = 10 V, IC = 5 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Symbol Min. Typ. Max. Unit hFE 40 - 140 - ICBO - - 100 nA IEBO - - 100 µA VBE - - 0.9 V fT 275 450 - MHz COB - 1 pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/11/2006