ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Unit Value ST 2SC1213 ST 2SC1213A Collector Base Voltage VCBO 35 50 V Collector Emitter Voltage VCEO 35 50 V Emitter Base Voltage VEBO 4 V Collector Current IC 500 mA Power Dissipation Ptot 400 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 7/12/2002 ST 2SC1213 / 2SC1213A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit B hFE 60 - 120 - C hFE 100 - 200 - D hFE hFE 160 - 320 - 10 - - - DC Current Gain at IC=10mA, VCE=3V at IC=500mA, VCE=3V Collector Cutoff Current at VCB=20V ST 2SC1213 ICBO - - 0.5 μA at VCB=20V ST2SC1213A ICBO - - 0.5 μA ST 2SC1213 V(BR)CBO 35 - - V ST 2SC1213A V(BR)CBO 50 - - V ST 2SC1213 V(BR)CEO 35 - - V ST 2SC1213A V(BR)CEO 50 - - V ST 2SC1213 V(BR)EBO 4 - - V ST 2SC1213A V(BR)EBO 4 - - V ST 2SC1213 VCE(sat) - 0.2 0.6 V ST 2SC1213A VCE(sat) - 0.2 0.6 V ST 2SC1213 VBE - 0.64 - V ST 2SC1213A VBE - 0.64 - V Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Saturation Voltage at IC=150mA, IB=15mA Base Emitter Voltage at IC=10mA, VCE=3V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 7/12/2002