SEMTECH_ELEC ST2SC1213

ST 2SC1213 / 2SC1213A
NPN Silicon Epitaxial Planar Transistor
Low frequency amplifier applications.
The transistor is subdivided into three groups, B, C
and D, according to its DC current gain. As
complementary type the PNP transistor ST 2SA673
and ST 2SA673A are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 oC)
Symbol
Unit
Value
ST 2SC1213
ST 2SC1213A
Collector Base Voltage
VCBO
35
50
V
Collector Emitter Voltage
VCEO
35
50
V
Emitter Base Voltage
VEBO
4
V
Collector Current
IC
500
mA
Power Dissipation
Ptot
400
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 7/12/2002
ST 2SC1213 / 2SC1213A
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
B
hFE
60
-
120
-
C
hFE
100
-
200
-
D
hFE
hFE
160
-
320
-
10
-
-
-
DC Current Gain
at IC=10mA, VCE=3V
at IC=500mA, VCE=3V
Collector Cutoff Current
at VCB=20V
ST 2SC1213
ICBO
-
-
0.5
μA
at VCB=20V
ST2SC1213A
ICBO
-
-
0.5
μA
ST 2SC1213
V(BR)CBO
35
-
-
V
ST 2SC1213A
V(BR)CBO
50
-
-
V
ST 2SC1213
V(BR)CEO
35
-
-
V
ST 2SC1213A
V(BR)CEO
50
-
-
V
ST 2SC1213
V(BR)EBO
4
-
-
V
ST 2SC1213A
V(BR)EBO
4
-
-
V
ST 2SC1213
VCE(sat)
-
0.2
0.6
V
ST 2SC1213A
VCE(sat)
-
0.2
0.6
V
ST 2SC1213
VBE
-
0.64
-
V
ST 2SC1213A
VBE
-
0.64
-
V
Collector Base Breakdown Voltage
at IC=10μA
Collector Emitter Breakdown Voltage
at IC=1mA
Emitter Base Breakdown Voltage
at IE=10μA
Collector Saturation Voltage
at IC=150mA, IB=15mA
Base Emitter Voltage
at IC=10mA, VCE=3V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 7/12/2002