SEMTECH_ELEC ST2SC2668

ST 2SC2668
NPN Silicon Epitaxial Planar Transistor
High frequency amplifier applications.
The transistor is subdivided into three groups, R, O
and Y, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25oC)
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
4
V
Collector Current
IC
20
mA
Base Current
IB
4
mA
Ptot
100
mW
Junction Temperature Range
Tj
125
O
Storage Temperature Range
TS
-55 to +125
O
Power Dissipation
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
C
ST 2SC2668
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
R
hFE
40
-
80
-
O
hFE
70
-
140
-
Y
hFE
100
-
200
-
ICBO
-
-
0.5
μA
IEBO
-
-
0.5
μA
Cre
-
0.70
-
pF
fT
-
550
-
MHz
CC rbb’
.
-
-
30
ps
NF
-
2.5
5.0
dB
Gpe
-
18
-
dB
DC Current Gain
at VCE=6V, IC=1mA
Current Gain Group
Collector Cutoff Current
at VCB=40V
Emitter Cutoff Current
at VEB=4V
Reverse Transfer Capacitance
at VCE=6V, f=1MHz
Transition Frequency
at VCE=6V, IC=1mA
Collector Base Time Constant
at VCE=6V, IE=-1mA,f=30MHz
Noise Figure
at VCC=6V, f=100MHz, IE=-1mA
Power Gain
at VCC=6V, f=100MHz, IE=-1mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002