ST 2SC2668 NPN Silicon Epitaxial Planar Transistor High frequency amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 4 V Collector Current IC 20 mA Base Current IB 4 mA Ptot 100 mW Junction Temperature Range Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 C ST 2SC2668 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit R hFE 40 - 80 - O hFE 70 - 140 - Y hFE 100 - 200 - ICBO - - 0.5 μA IEBO - - 0.5 μA Cre - 0.70 - pF fT - 550 - MHz CC rbb’ . - - 30 ps NF - 2.5 5.0 dB Gpe - 18 - dB DC Current Gain at VCE=6V, IC=1mA Current Gain Group Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=4V Reverse Transfer Capacitance at VCE=6V, f=1MHz Transition Frequency at VCE=6V, IC=1mA Collector Base Time Constant at VCE=6V, IE=-1mA,f=30MHz Noise Figure at VCC=6V, f=100MHz, IE=-1mA Power Gain at VCC=6V, f=100MHz, IE=-1mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002