MMBTSC2714 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier at FM,RF,MIX, and IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 4 V Collector Current IC 20 mA Base Current IB 4 mA Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC2714 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 40 - 80 - hFE 70 - 140 - hFE 100 - 200 - ICBO - - 0.5 µA IEBO - - 0.5 µA fT - 550 - MHz Cre - 0.7 - pF Cc.rbb’ - - 30 ps NF - 2.5 5 dB Gpe 17 23 - dB DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=4V Transition Frequency at VCE=6V, IC=1mA Reverse Transfer Capacitance at VCB=6V, f=1MHz Collector-Base Time Constant Noise Figure at VCE=6V, IE=-1mA, f=100MHz Power Gain at VCE=6V, IE=-1mA, f=100MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC2714 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005