MMBTSA1980W PNP Silicon Epitaxial Planar Transistor for general small signal amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage -VCBO 50 V Collector-Emitter Voltage -VCEO 50 V Emitter-Base Voltage -VEBO 5 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 +150 O C C Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Cutoff Current at -VCB = 50 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Transition Frequency at -VCE = 10 V, -IC = 1 mA Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -VCE = 6 V, -IC = 0.1 mA,tf = 1 KHz, RG = 10 KΩ O Y G L Symbol Min. Max. Unit hFE hFE hFE hFE 70 120 200 300 140 240 400 700 - -V(BR)CBO 50 - V -V(BR)CEO 50 - V -V(BR)EBO 5 - V -ICBO - 0.1 µA -IEBO - 0.1 µA -VCE(sat) - 0.3 V fT 80 - MHz COB - 7 pF NF - 10 dB SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/03/2006 MMBTSA1980W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/03/2006