SEMTECH_ELEC MMBTSA1980W

MMBTSA1980W
PNP Silicon Epitaxial Planar Transistor
for general small signal amplifier applications.
The transistor is subdivided into four groups, O, Y,
G and L, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
-VCBO
50
V
Collector-Emitter Voltage
-VCEO
50
V
Emitter-Base Voltage
-VEBO
5
V
Collector Current
-IC
150
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 +150
O
C
C
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at -VCE = 6 V, -IC = 2 mA
Current Gain Group
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Cutoff Current
at -VCB = 50 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Transition Frequency
at -VCE = 10 V, -IC = 1 mA
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Noise Figure
at -VCE = 6 V, -IC = 0.1 mA,tf = 1 KHz, RG = 10 KΩ
O
Y
G
L
Symbol
Min.
Max.
Unit
hFE
hFE
hFE
hFE
70
120
200
300
140
240
400
700
-
-V(BR)CBO
50
-
V
-V(BR)CEO
50
-
V
-V(BR)EBO
5
-
V
-ICBO
-
0.1
µA
-IEBO
-
0.1
µA
-VCE(sat)
-
0.3
V
fT
80
-
MHz
COB
-
7
pF
NF
-
10
dB
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 30/03/2006
MMBTSA1980W
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 30/03/2006