SEMTECH_ELEC ST2SC828A

ST 2SC828 / 828A
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
These transistors are subdivided into three groups Q,
R and S according to their DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Unit
Value
ST 2SC828 ST 2SC828A
Collector Base Voltage
VCBO
30
45
V
Collector Emitter Voltage
VCEO
25
45
V
Emitter Base Voltage
VEBO
7
V
Peak Collector Current
ICM
100
mA
Collector Current
IC
50
mA
Power Dissipation
Ptot
400
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SC828 / 828A
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
Q
hFE
130
-
280
-
R
hFE
180
-
360
-
S
hFE
260
-
520
-
ST 2SC828
V(BR)CBO
30
-
-
V
ST 2SC828A
V(BR)CBO
45
-
-
V
ST 2SC828
V(BR)CEO
25
-
-
V
ST 2SC828A
V(BR)CEO
45
-
-
V
V(BR)EBO
7
-
-
V
VCE(sat)
-
0.14
-
V
VBE
-
-
0.8
V
fT
-
220
-
MHz
NF
-
6
-
dB
DC Current Gain
at IC=2mA, VCE=5V
Current Gain Group
Collector Base Breakdown Voltage
at IC=10μA
Collector Emitter Breakdown Voltage
at IC=2mA
Emitter Base Breakdown Voltage
at IE=10μA
Collector Saturation Voltage
at IC=50mA, IB=5mA
Base Emitter Voltage
at IC=10mA, VCE=5V
Gain Bandwidth Product
at IC=-2mA, VCE=10V
Noise Figure
at VCE=5V,IE=0.2mA,
RG=2kΩ,f=1kHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002