MMBTSB1689W PNP Silicon Epitaxial Planar Transistors for low frequency amplifier and driver applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 15 V Collector Emitter Voltage -VCEO 12 V Emitter Base Voltage -VEBO 6 V -IC 1.5 A -ICP 3 1) A Power Dissipation Ptot 200 Junction Temperature TJ 150 O Storage Temperature Range Ts -55 to +150 O Collector Current 1) mW C C Single pulse, Pw = 1 ms. Characteristics at Tamb = 25 OC Symbol Min. Typ. Max. Unit hFE 270 - 680 - Collector Base Breakdown Voltage at -IC = 10 µA -V(BR)CBO 15 - - V Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 12 - - V -V(BR)EBO 6 - - V -VCEsat - - 0.2 V -ICBO - - 100 nA -IEBO - - 100 nA fT - 400 - MHz Cob - 12 - pF Parameter DC Current Gain at -VCE = 2 V, -IC = 200 mA Emitter Base Breakdown Voltage at -IE= 10 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 25 mA Collector Cutoff Current at -VCB = 15 V Emitter Cutoff Current at -VEB = 6 V Transition Frequency at -VCE = 2 V, IE = 200 mA, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/01/2006 MMBTSB1689W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/01/2006