SEMTECH_ELEC ST2SD882H

ST 2SD882H
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R,
Q, P and E, according to its DC current gain.
E
C
B
TO-126 Plastic Package
Absolute Maximum Ratings (Ta = 25 C)
Parameter
O
Symbol
Value
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
3
A
Collector Current (pulse)
ICP
7
A
Total Power Dissipation(Ta = 25 OC)
Ptot
1
W
Total Power Dissipation(TC = 25 OC)
Ptot
10
W
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 2 V, IC = 1 A
Current Gain Group
at VCE = 2 V, IC = 20 mA
Collector Cutoff Current
at VCB = 60 V
Emitter Cutoff Current
at VEB = 3 V
Collector Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
Base Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
Gain Bandwidth Product
at VCE = 5 V, IC = 0.1 A
Output Capacitance
at VCB = 10 V, f = 1 MHz
R
Q
P
E
C
C
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
hFE
hFE
60
100
160
200
30
-
120
200
320
400
-
-
ICBO
-
-
1
µA
IEBO
-
-
1
µA
VCEsat
-
-
0.5
V
VBEsat
-
-
2
V
fT
-
90
-
MHz
Cob
-
45
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/09/2006
ST 2SD882H
o
TYPICAL CHARACTERISTICS (Ta=25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NOTE
1.Aluminum heat sink
of 1.0 mm thickness.
2.With no insulator film.
3.With silicon compound.
0
0
50
100
40
20
10
3
1
0.3
0.1
0
150
Rth-Thermal Resistance- oC/W
d
ite
heat sin
k
m
Without
Li
9cm 2
2
n
2
io
25c
m
60
at
nk
si
4
ite
d
ip
at
he
100
cm 2
Lim
ss
ite
6
S/b
80
Di
dT-Percentage of Rated Current-%
8
VCE=10V
I C=1.0A
30 Duty=0.001
100
fin
In
P T-Total Power Dissipation-W
10
THERMAL RESISTANCE vs.
PULSE WIDTH
DERATING CURVES FOR ALL TYPES
100
50
0.3
150
1
3
10
30
100 300
1000
PW-Pulse Width-mS
Ta-Ambient Temperature -o C
Tc-Case Temperature -o C
0.3
I C-Collector Current-A
1
0.1
0.03
NOTE
1.T C=25o C
2.Curves must be derated
Iinearly with increase of
temperature and Duty Cycle.
3
6
10
7
1.2
6
5
0.8
4
3
30
60
4
8
12
0.3
3
1
3
10
0.1
20
3
10
100
30
10
3
Cib
100
60
30
Cob
10
6
3
1
0.01
I C-Collector Current-A
f=1.0MHz
I E =0(Cob)
I C=0(Cib )
300
Cib -Input Capacitance-pF
Cob-Output Capacitance-pF
VCE(sat)
0.01
0.006
0.003
INPUT AND OUTPUT CAPACITANCE vs.
REVERSE VOLTAGE
VCE=5.0V
Forced air
cooling
(with heat sink)
300
1
16
GAIN BANDWIDTH PRODUCT vs.
COLLCETOR CURRENT
1000
VBE(sat)
0.001 0.003 0.01 0.03 0.1 0.3
1
0.6
VBE
I C-Collector Current-A
I C=10.I B
Pulse Test
0.1
0.06
0.03
10
6
3
o Voltage-V
VCE-Collector to Emitter
fT-Gain Bandwidth Product-MHz
VBE(sat) -Base Saturation Voltage-v
VCE(sat)-Collector Saturation Voltage-V
1
0.6
0.3
30
100
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
3
60
1
0.001 0.003 0.01 0.03 0.1 0.3
0
VCE-Collector to Emitter Voltage-V
10
2
0.4
h FE
100
I B =1mA
0.01
1
300
10
9
8
1.6
VCEO MAX.
IC-Collector Current-A
3
VCE=2.0V
Pulse Test
Pulse Test
h FE -DC Current Gain
I C(pulse) MAX.(PW 10ms,Duty Cycle 50%)
PW
1m
10
s
=1
I C(DC) MAX.
ms
00
DC
s
Di
ss
(S
ip
ing
at
L
io
le
S/
n
no imit
b
ed
nr
Li
ep
m
et
ite
itiv
d
ep
uls
e)
0.03
0.1
0.3
1
I C-Collcetor Current-A
1
3
6
10
30
60
VCB-Collector to Base Voltage-V
VEB -Emitter to Base Voltage-V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/09/2006
VBE -Base Emitter Voltage-V
1000
2.0
10
DC CURRENT GAIN, BASE TO EMITTER
VOLTAGE vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
SAFE OPERATING AREAS