Transistors SMD Type NPN Transistors 2SC4617 SOT-523 U n it: m m +0.1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 1 ● Collector Emitter Voltage VCEO=50V 0.36±0.1 +0.15 1.6-0. 15 ● Collector Current Capability IC=0.15A 3 ● Low Cob:Cob=2.0pF(Typ) 0.8±0.1 2 0.55 (REF.) ■ Features 0.15±0.05 0.3±0.05 ● Complement to 2SA1774 +0.1 0.5 -0.1 +0.1 0.8-0. 1 +0.05 0.75-0. 05 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 150 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 7 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 100 Emitter cut-off current IEBO VEB= 7V , IC=0 100 V Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=5mA 0.4 Base - emitter saturation voltage VBE(sat) IC=50 mA, IB=5mA 1.2 DC current gain hFE VCE= 6V, IC= 1mA Collector output capacitance Cob VCB= 12V, IE= 0,f=1MHz Transition frequency fT VCE= 12V, IC= 2mA,f=100MHz Unit 120 nA V 560 3.5 180 pF MHz ■ Classification of hfe Marking 2SC4617-Q 2SC4617-R 2SC4617-S Marking 120-270 180-390 270-560 Marking BQ BR BS www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC4617 ■ Typical Characterisitics IC 200 —— VCE 1/0.9/0.8mA IC COMMON EMITTER VCE=6V (mA) 0.7mA 300 0.6mA 120 DC CURRENT GAIN 0.4mA 0.3mA 80 0.2mA 40 Ta=25 ℃ hFE 0.5mA IC COLLECTOR CURRENT —— Ta=100 ℃ 160 0 hFE 1000 COMMON EMITTER Ta=25 ℃ 100 30 IB=0.1mA 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1000 20 VCE 10 0.1 24 3 1 0.3 (V) 10 COLLECTOR CURREMT Ic IC 100 —— IC 100 30 200 (mA) VBE VCE=6V COMMON EMITTER IC/IB=10 (mA) IC COLLCETOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 30 300 100 Ta=100 ℃ 30 Ta=25 ℃ 10 Ta=100 ℃ 3 Ta=25 ℃ 1 0.3 10 0.1 0.3 1 10 3 COLLECTOR CURRENT Cob/Cib 100 —— 100 30 Ic 0.1 0.0 200 0.2 (mA) 0.4 0.6 BASE-EMMITER VOLTAGE VCB/VEB Pc 200 —— 0.8 VBE 1.0 (V) Ta f=1MHz IE=0 / IC=0 o COLLECTOR POWER DISSIPATION Pc (mW) Ta=25 C (pF) 30 CAPACITANCE C Cib 10 Cob 3 1 0.1 0.3 1 REVERSE VOLTAGE 2 www.kexin.com.cn 10 3 V 30 (V) 100 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150