BC847S Multi-chip transistor (NPN) SOT-363 APPLICATION C1 B2 This device is designed for general purpose amplifier applications E2 Marking :1C E1 B1 C2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 6 Units V IC Collector Current-Continuous 200 mA PD Power Dissipation 200 mW Thermal Resistance. Junction to Ambient 625 ℃/W Junction Temperature 150 RθJA Tj Tstg Storage Temperature Range -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 Emitter cut-off current IEBO VEB =4V , IC=0 15 DC current gain* hFE VCE=5V,IC=2mA nA 110 630 VCE(sat)(1) IC=10mA,IB=0.5mA 0.25 V VCE(sat)(2) IC=100mA,IB=5mA 0.65 V 0.7 V 0.77 V Collector-emitter saturation voltage VBE(1) VCE=5V,IC=2mA VBE(2) VCE=5V,IC=10mA 0.58 Base-emitter voltage Transition frequency Collector output capacitance fT Cob VCE=5V,IC=20mA ,f=100MHz VCB=10V,IE=0,f=1MHz 200 MHz 2 pF *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 BC847S Typical Characteristics IC 50 —— VCE hFE 1000 IC COMMON EMITTER VCE=5V o Ta=100 C 100uA 300 80uA 30 o Ta=25 C hFE 90uA DC CURRENT GAIN COLLECTOR CURRENT —— 40 IC (mA) COMMON EMITTER o Ta=25 C 70uA 60uA 50uA 20 40uA 30uA 10 100 30 20uA IB=10uA 0 10 0 10 20 30 40 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— VCE 50 IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 300 100 o Ta=100 C o Ta=25 C 30 200 100 (mA) IC o Ta=25 C 600 o Ta=100 C 500 400 300 200 COMMON EMITTER IC/IB=20 100 3 10 IC 100 100 30 COLLECTOR CURRENT —— IC 30 10 COLLECTOR CURRENT VBE Cob 10 9 —— IC VCB f=1MHz IE=0 7 Cob (mA) (pF) 30 OUTPUT CAPACITANCE 10 3 1 0.3 200 100 (mA) 8 o Ta=25 C o Ta=25 C 6 5 4 3 2 1 0.2 0.4 0.6 BASE-EMMITER VOLTAGE fT 1000 —— 0.8 VBE 1.0 1 30 10 3 (V) COLLECTOR-BASE VOLTAGE IC PC 300 COLLECTOR POWER DISSIPATION PC (mW) 0.1 0.0 3 1 200 (mA) VCE=5V IC —— IC 700 1 COLLCETOR CURRENT VBEsat 1000 900 10 300 fT (MHz) 30 10 COLLECTOR CURRENT COMMON EMITTER IC/IB=20 TRANSITION FREQUENCY 3 1 (V) 100 30 COMMON EMITTER VCE=5V —— VCB 100 (V) Ta 250 200 150 100 50 o Ta=25 C 10 0 1 3 10 COLLECTOR CURRENT 30 IC 100 (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 o ( C) 2 JinYu semiconductor www.htsemi.com Date:2011/ 05