HTSEMI BC847S

BC847S
Multi-chip transistor (NPN)
SOT-363
APPLICATION
C1
B2
This device is designed for general purpose amplifier applications
E2
Marking :1C
E1
B1
C2
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
45
VEBO
Emitter-Base Voltage
6
Units
V
IC
Collector Current-Continuous
200
mA
PD
Power Dissipation
200
mW
Thermal Resistance. Junction to Ambient
625
℃/W
Junction Temperature
150
RθJA
Tj
Tstg
Storage Temperature Range
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
6
V
Collector cut-off current
ICBO
VCB=30V,IE=0
15
Emitter cut-off current
IEBO
VEB =4V , IC=0
15
DC current gain*
hFE
VCE=5V,IC=2mA
nA
110
630
VCE(sat)(1)
IC=10mA,IB=0.5mA
0.25
V
VCE(sat)(2)
IC=100mA,IB=5mA
0.65
V
0.7
V
0.77
V
Collector-emitter saturation voltage
VBE(1)
VCE=5V,IC=2mA
VBE(2)
VCE=5V,IC=10mA
0.58
Base-emitter voltage
Transition frequency
Collector output capacitance
fT
Cob
VCE=5V,IC=20mA ,f=100MHz
VCB=10V,IE=0,f=1MHz
200
MHz
2
pF
*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
BC847S
Typical Characteristics
IC
50
——
VCE
hFE
1000
IC
COMMON EMITTER
VCE=5V
o
Ta=100 C
100uA
300
80uA
30
o
Ta=25 C
hFE
90uA
DC CURRENT GAIN
COLLECTOR CURRENT
——
40
IC
(mA)
COMMON EMITTER
o
Ta=25 C
70uA
60uA
50uA
20
40uA
30uA
10
100
30
20uA
IB=10uA
0
10
0
10
20
30
40
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
——
VCE
50
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
800
300
100
o
Ta=100 C
o
Ta=25 C
30
200
100
(mA)
IC
o
Ta=25 C
600
o
Ta=100 C
500
400
300
200
COMMON EMITTER
IC/IB=20
100
3
10
IC
100
100
30
COLLECTOR CURRENT
——
IC
30
10
COLLECTOR CURRENT
VBE
Cob
10
9
——
IC
VCB
f=1MHz
IE=0
7
Cob
(mA)
(pF)
30
OUTPUT CAPACITANCE
10
3
1
0.3
200
100
(mA)
8
o
Ta=25 C
o
Ta=25 C
6
5
4
3
2
1
0.2
0.4
0.6
BASE-EMMITER VOLTAGE
fT
1000
——
0.8
VBE
1.0
1
30
10
3
(V)
COLLECTOR-BASE VOLTAGE
IC
PC
300
COLLECTOR POWER DISSIPATION
PC (mW)
0.1
0.0
3
1
200
(mA)
VCE=5V
IC
——
IC
700
1
COLLCETOR CURRENT
VBEsat
1000
900
10
300
fT
(MHz)
30
10
COLLECTOR CURRENT
COMMON EMITTER
IC/IB=20
TRANSITION FREQUENCY
3
1
(V)
100
30
COMMON EMITTER
VCE=5V
——
VCB
100
(V)
Ta
250
200
150
100
50
o
Ta=25 C
10
0
1
3
10
COLLECTOR CURRENT
30
IC
100
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
o
( C)
2
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05