3VD045060JL 3VD045060JL N-channel MOSFET CHIPS DESCRIPTION Ø 3VD045060JL is a N-Channel enhancement mode 2 MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø High density cell design for low RDS(ON) Ø Rugged and reliable. Ø Fast switching performance. Ø High saturation current capability. Ø The chips may be packaged in SOT-23 type and the Ø The packaged product is widely used in the small 1 typical equivalent product is 2N7002. PAD1: GATE PAD2: SOURCE CHIP TOPOGRAPHY servo motor control, power MOS-FET gate drivers, Ø and other switching applications. Ø Chip Thickness: 230±20µm. Die size: 0.53mm*0.53mm. Ø Top metal : Al, Backside Metal : Au. ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current ID 115 mA Power Dissipation (SOT-23) PD 200 mW Operation Junction Temperature TJ 150 °C Storage Temperature Tstg -55-150 °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Symbol Drain-Source Breakdown Voltage V(BR)DSS Gate-Threshold Voltage* Test conditions Min Typ Max Unit VGS=0V, ID=10µA 60 VGS =0V, ID=3mA 60 Vth(GS) VDS= VGS, ID=250µA 1 Gate-body Leakage lGSS VDS=0V, VGS =±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=60V, VGS =0V 1 µA On-state Drain Current* ID(ON) VGS=10V, VDS=7V V 2.5 500 mA VGS=10V, ID=500mA 1.2 7.5 VGS=5V, ID=50mA 1.7 7.5 Drain-Source On-Resistance* RDS(on) Drain-Source On- Voltage * VDS(on) Forward Transconductance* gts VDS=10V, ID=200mA Diode Forward Voltage VSDF IS=115mA, VGS =0V VGS=10V, ID=500mA 3.75 VGS=5V, ID=50mA 0.375 80 V ms 1.2 V Note:* Pulse test, pulse width 300µS, duty cycle 2% HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.07.02 Page 1 of 1