3PT068080JL 3PT068080JL PHOTO TRANSISTOR CHIPS DESCRIPTION Ø 3PT068080JL is NPN phototransistor chips that fabricated in silicon epitaxial planar technology; Ø The chips are widely used in photo-coupler for Ø It has low dark current, high sensitivity, high switching power suppliers; responsible time etc; Ø The top side electrode material is Al, and the Ø Chip Size: 680µm×450µm; Ø Chip Thickness: 220±20µm; Ø Emitter PAD Size(E): 130µm×105µm; Ø Base PAD Size(B): 40µm × 40µm (only for chip backside electrode material is Au; Chip Topography E: Emitter B: Base probing). ABOSULATE MAXIMUM RATINGS Parameters Symbol Ratings Unit TJ 125 °C TSTG -40~125 °C Maximum Operation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Tamb=25°C) Characteristics Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current Symbol Test conditions Voltage Unit IC=100µA, IB=0µA 80 V BVECO IC=10µA, IB=0µA 7 V ICEO VCE=20V, H=0mW/cm2 50 nA 150 nA VCE(SAT) IC=2mA, IB=100µA 0.2 V IC=20mA, IB=100µA 2 V 10 µs 7.4 pF 2 Rise/ Fall Time Tr/Tf VCE=2V, IC=2mA, RL=100 Ω Current Gain hFE VCE=5V, IC=2mA Collector-Base Capacitance CCB f=1MHz, VCB=3V HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn Max. BVCEO VCE=80V, H=0mW/cm Collector Emitter Saturation Min. 700 REV:1.0 2007.07.02 Page 1 of 1