3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 1 3 1-Gate PAD 3-Source PAD ¾ Advanced termination scheme to provide enhanced voltageblocking capability. ¾ Avalanche Energy Specified ¾ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ¾ The chips may packaged in TO-251-3Ltype and the typical equivalent product is 1N60. ¾ The packaged product is widely used in AC-DC power CHIP TOPOGRAPHY suppliers, DC-DC converters and H-bridge PWM motor drivers. ¾ Die size: 1.96mm*1.78mm. ¾ Chip Thickness: 300±20μm. ¾ Top metal : Al, Backside Metal : Ag. ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current ID 1.0 A Operation Junction Temperature TJ 150 °C Tstg -55-150 °C Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain-Source Breakdown Voltage Symbol Test conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0V, ID=250uA 600 --- ---- V Vth(GS) ID=250uA ,VDS=VGS 2.0 --- 4.0 V Gate-Body Leakage lGSS VGS=±30V, VDS=0V --- --- ±100 nA Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V --- --- 1.0 µA ID=0.4A, VGS=10V --- --- 11 Ω ID=1.0A,VGS=0V --- --- 1.4 V Gate-Threshold Voltage Drain-Source On-Resistance Source-Drain Diode Forward On Voltage RDS(on) VFSD HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http:www.silan.com.cn REV:1.0 2008.10.15 Page 1 of 1