3VD060060NEJL 3VD060060NEJL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION Ø 3VD060060JL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 2KV Ø High density cell design for low RDS(ON) Ø Rugged and reliable. Ø Fast switching performance. Ø High saturation current capability. Ø The chips may be packaged in SOT-23 type and the typical equivalent product is 2N7002K. Ø CHIP TOPOGRAPHY The packaged product is widely used in the small servo motor control, power MOS-FET gate drivers, and other switching applications. Ø Die size: 0.60mm*0.60mm. Ø Chip Thickness: 230±20µm. Ø Top metal : Al, Backside Metal : Au. EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current ID 300 mA Power Dissipation (SOT-23) PD 350 mW Operation Junction Temperature TJ 150 °C Storage Temperature Tstg -55-150 °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Symbol Drain-Source Breakdown Voltage V(BR)DSS Gate-Threshold Voltage* Test conditions Min Typ Max VGS=0V, ID=10µA 60 -- Vth(GS) VDS= VGS, ID=250µA 1 Gate-body Leakage lGSS VDS=0V, VGS =±20V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS =0V Drain-Source On-Resistance* RDS(on) ----- ------- VGS=10V, ID=500mA VGS=5V, ID=50mA 2.5 Unit V ±10 µA 1 µA 2.0 3.0 Note:* Pulse test, pulse width 300µS, duty cycle 2% HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.09.03 Page 1 of 1