SSF3018D Feathers: ID=80A Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test BV=100V Rdson=14mohm Description: The SSF3018D is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 11.6mohm. Application: Power switching application Absolute Maximum Ratings SSF3018D TOP View (TO220) Parameter Max. Units ID@Tc=25ْ C Continuous drain current,VGS@10V 80 ID@Tc=100ْC Continuous drain current,VGS@10V 70 IDM Pulsed drain current ① 320 PD@TC=25ْC Power dissipation 192 W Linear derating factor 2.0 W/ْ C VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 460 mJ EAR Repetitive avalanche energy TBD TJ Operating Junction and TSTG Storage Temperature Range A ْC –55 to +150 Thermal Resistance RθJC Parameter Min. Typ. Max. Units Junction-to-case — 0.65 — ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source breakdown voltage 100 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 11.6 14 mΩ VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance 33 55 — S VDS=10V,ID=40A — — 1 IDSS Drain-to-Source leakage current — — 5 Gate-to-Source forward leakage — — 200 Gate-to-Source reverse leakage — — -200 Qg Total gate charge — 60 — Qgs Gate-to-Source charge — 21 — IGSS ©Silikron Semiconductor CO. LTD. 2009.7.15 Test Conditions VDS=100V,VGS=0V μA VDS=100V, VGS=0V,TJ=150ْC nA VGS=20V VGS=-20V nC Version: 1.0 ID=25A VDS=0.5VDSS page 1of5 SSF3018D Qgd Gate-to-Drain("Miller") charge — 15 — VGS=10V td(on) Turn-on delay time — 31 — VDS=0.5VDSS tr Rise time — 54 — td(off) Turn-Off delay time — 40 — tf Fall time — 48 — VGS=10V Ciss Input capacitance — 3040 — VGS=0V Coss Output capacitance — 420 — Crss Reverse transfer capacitance — 90 — ID=10A nS RG=15Ω pF VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Continuous Source Current. IS ISM (Body Diode) Pulsed Source Current (Body Diode) ① . Min. Typ. Max. — — 80 Units MOSFET symbol A — — 320 Test Conditions showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.3 V trr Reverse Recovery Time - 100 — nS ton Forward Turn-on Time TJ=25ْC,IS=30A,VGS=0V ③ IF=25A, VR=50V, VGS=0V, -di/dt=100A/μs ③ Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 37A, VDD = 50V ③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C EAS test circuits: Gate charge test circuit: BV dss ©Silikron Semiconductor CO. LTD. 2009.7.15 Version: 1.0 page 2of5 SSF3018D Switch Waveforms: Switch Time Test Circuit: Input Admittance Capacitance On Resistance vs. Junction Temperature On Resistance vs. Drain Current ©Silikron Semiconductor CO. LTD. 2009.7.15 Version: 1.0 page 3of5 SSF3018D Gate Charge Forward Voltage Drop of Intrinsic Diode Output Characteristics@25℃ Drain Current vs. Case Temperature Maximum Transient Thermal Impedance ©Silikron Semiconductor CO. LTD. 2009.7.15 Version: 1.0 page 4of5 SSF3018D TO220 MECHANICAL DATA: ©Silikron Semiconductor CO. LTD. 2009.7.15 Version: 1.0 page 5of5