January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. 25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. ______________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage NDP603AL VGSS Gate-Source Voltage - Continuous ID Drain Current - Continuous - Pulsed PD Total Power Dissipation @ TC = 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Derate above 25°C NDB603AL Units 30 V ± 20 V 25 (Note 1) A 100 50 W 0.4 W/°C -65 to 175 °C 275 °C THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W © 1997 Fairchild Semiconductor Corporation NDP603AL.SAM Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 100 mJ 25 A 10 µA DRAIN-SOURCE AVALANCHE RATINGS (Note 2) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 25 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 30 V IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA 1.5 3 V 0.7 1.1 2.2 1.4 1.85 3 ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage 1.1 VDS = VGS, ID = 250 µA o TJ = 125 C VDS = VGS, ID = 10 mA o TJ = 125 C RDS(ON) Static Drain-Source On-Resistance 1 VGS = 10 V, ID = 25 A TJ = 125oC VGS = 4.5 V, ID = 10 A ID(on) gFS On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 10 V 60 VGS = 4.5 V, VDS = 10 V 15 1.5 2.2 0.019 0.022 0.028 0.045 0.031 0.04 Ω A VDS = 10 V, ID = 25 A 18 S VDS = 15 V, VGS = 0 V, f = 1.0 MHz 1100 pF 540 pF 175 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 15 V, ID = 25 A, VGS = 10 V, RGEN = 24 Ω VDS = 10 V, ID = 25 A, VGS = 10 V 15 30 ns 70 110 ns 90 150 ns 80 130 ns 28 40 nC 5 7 nC 7 10 nC 25 A 1.3 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25 A (Note 2) Note: 1. Maximum DC current limited by the package. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDP603AL.SAM Typical Electrical Characteristics 3 8.0 7.0 6.0 60 RDS(on) , NORMALIZED ID , DRAIN-SOURCE CURRENT (A) VGS =10V 5.0 40 4.5 4.0 20 DRAIN-SOURCE ON-RESISTANCE 80 VGS = 4V 2.5 4.5 5.0 2 6.0 1.5 7.0 8.0 10 1 3.0 0 0.5 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 0 5 Figure 1. On-Region Characteristics. R DS(on) , NORMALIZED 1.2 1 0.8 DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS =10V 80 V GS = 10V 2 TJ = 125°C 1.5 25°C 1 -55°C 0.5 -25 0 25 50 75 100 125 150 175 0 20 TJ , JUNCTION TEMPERATURE (°C) 40 60 80 I D , DRAIN CURRENT (A) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 40 0.05 V DS = 1 0 V TJ = -55°C V DS = 1 0 V 25 125 0.04 30 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 60 2.5 I D = 25A 0.6 -50 40 I D , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 1.4 20 20 10 0 1 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V) 6 Figure 5. Drain Current Variation with Gate Voltage and Temperature. TJ = 125°C 25°C -55°C 0.03 0.02 0.01 0 0.5 1 1.5 2 VGS , GATE TO SOURCE VOLTAGE (V) 2.5 Figure 6. Sub-threshold Drain Current Variation with Gate Voltage and Temperature. NDP603AL.SAM 2.2 1.12 VDS = VGS BV DSS , NORMALIZED 2 I D = 10mA 1.8 1.6 1mA 1.4 1.2 250uA 1 0.8 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE BREAKDOWN VOLTAGE Vth, GATE-SOURCE THRESHOLD VOLTAGE (V) Typical Electrical Characteristics (continued) ID = 250µA 1.08 1.04 1 0.96 0.92 -50 175 Figure 7. Gate Threshold Variation with Temperature I D = 25A , GATE-SOURCE VOLTAGE (V) C iss 1000 C oss 500 300 C rss 175 VDS = 5V 10 8 20 6 4 2 GS f = 1 MHz V GS = 0 V 0 0.2 0.5 V DS 1 2 5 10 20 30 0 5 10 , DRAIN TO SOURCE VOLTAGE (V) t on t d(on) t d(off) V OUT Output, Vout tf 10% 10% 90% Input, Vin S Figure 11. Switching Test Circuit 30 90% 90% DUT G 25 t off tr RL D R GEN 20 Figure 10. Gate Charge Characteristics. VDD V IN 15 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics. VGS 150 V CAPACITANCE (pF) 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 10 2000 100 0.1 0 Figure 8. Breakdown Voltage Variation with Temperature. 2500 200 -25 Inverted 50% 50% 10% Pulse Width Figure 12. Switching Waveforms NDP603AL.SAM Typical Electrical Characteristics (continued) 25 IS , REVERSE DRAIN CURRENT (A) 20 25°C 15 125°C 10 5 V DS = 10V 40 20 10 5 V GS = 0V 2 1 0.5 TJ = 125°C 25°C -55°C 0.2 0.1 g FS , TRANSCONDUCTANCE (SIEMENS) T = -55°C J 0 0 10 20 I D 30 40 0.2 0.4 , DRAIN CURRENT (A) Figure 13. Transconductance Variation with Drain Current and Temperature 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 14. Body Diode Forward Voltage Variation with Current and Temperature 150 100 1m D I , DRAIN CURRENT (A) 50 20 R ( DS ON )L im it 10 10 0m 1s 10 m s s s DC 5 V GS = 20V SINGLE PULSE 2 TC = 25°C 1 0.5 0.1 0.5 1 2 5 10 30 50 V DS , DRAIN-SOURCE VOLTAGE(V) Figure 15. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R = 2.5 °C/W θJC 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.03 0.02 t1 t2 0.01 0.02 0.01 0.01 TJ - T C = P * R θJC (t) Duty Cycle, D = t1 /t2 Single Pulse 0.1 1 10 100 1000 t1 ,TIME (ms) Figure 16. Transient Thermal Response Curve NDP603AL.SAM