CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CHM4301PAPT CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small flat package. ( TO-252A ) .280 (7.10) .238 (6.05) * Super high density cell design for extremely low RDS(ON). * High power and current handing capability. .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) CONSTRUCTION * P-Channel Enhancement (1) (3) (2) .035 (0.90) .025 (0.64) .417 (10.6) .346 (8.80) .261 (6.63) .213 (5.40) .220 (5.59) .195 (4.95) .102 (2.59) .078 (1.98) .024 (0.61) .016 (0.40) 1 Gate 3 CIRCUIT D 2 Source 3 Drain( Heat Sink ) 1 G Dimensions in inches and (millimeters) 2S Absolute Maximum Ratings Symbol TO-252A TA = 25°C unless otherwise noted Parameter CHM4301PAPT Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous -20 ID A - Pulsed (Note 3) -80 PD Maximum Power Dissipation TJ Operating Temperature Range -55 to 150 °C TSTG Storage Temperature Range -55 to 150 °C 50 °C/W 31 W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2007-06 RATING CHARACTERISTIC CURVES ( CHM4301PAPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -40 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -32 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = -250 µA -1 VGS=-10V, ID=-12A 32 42 VGS=-4.5V, ID=-8A 50 65 VDS = -5V, ID = -8A 12 mΩ S Dynamic Characteristics Ciss 1115 Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -20V, VGS = 0V, f = 1.0 MHz 205 pF 120 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge VDS=-20V, ID=-5A VGS=-10V 19 25 nC 2.1 3.4 t on Turn-On Time V DD= -20V 12 25 tr Rise Time I D = -5.0A , VGS = -10 V 5 15 t off Turn-Off Time RGEN= 3 Ω 40 80 tf Fall Time 13 30 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -1.0A , VGS = 0 V (Note 2) (Note 1) -20 A -1.3 V RATING CHARACTERISTIC CURVES ( CHM4301PAPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 10 10 V G S =-1 0 , - 6 , - 5 V -I D , DRAIN CURRENT (A) -I D , DRAIN CURRENT (A) 8 6 4 VG S =-3 . 0 V 2 8 6 4 TJ=125°C TJ=-55°C 2 TJ=25°C 0 0 1.0 2.0 3.0 4.0 -VDS , DRAIN-TO-SOURCE VOLTAGE (V) 0 5.0 R DS(on) , NORMALIZED 6 4 2 0 4 8 12 Qg , TOTAL GATE CHARGE (nC) 16 20 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 THRESHOLD VOLTAGE VGS=-10V ID=-12A 1.9 8 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE -VGS , GATE TO SOURCE VOLTAGE (V) 2.2 VDS=-20V ID=-5A 0 Vth , NORMALIZED GATE-SOURCE 5.0 Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge 10 1.3 3.0 4.0 2.0 1.0 -VGS , GATE-TO-SOURCE VOLTAGE (V) 0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200