CHENMKO CHM4301PAPT

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 40 Volts
CHM4301PAPT
CURRENT 20 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
TO-252A
FEATURE
* Small flat package. ( TO-252A )
.280 (7.10)
.238 (6.05)
* Super high density cell design for extremely low RDS(ON).
* High power and current handing capability.
.094 (2.40)
.087 (2.20)
.035 (0.89)
.018 (0.45)
CONSTRUCTION
* P-Channel Enhancement
(1)
(3) (2)
.035 (0.90)
.025 (0.64)
.417 (10.6)
.346 (8.80)
.261 (6.63)
.213 (5.40)
.220 (5.59)
.195 (4.95)
.102 (2.59)
.078 (1.98)
.024 (0.61)
.016 (0.40)
1 Gate
3
CIRCUIT
D
2 Source
3 Drain( Heat Sink )
1 G
Dimensions in inches and (millimeters)
2S
Absolute Maximum Ratings
Symbol
TO-252A
TA = 25°C unless otherwise noted
Parameter
CHM4301PAPT
Units
VDSS
Drain-Source Voltage
-40
V
VGSS
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
-20
ID
A
- Pulsed
(Note 3)
-80
PD
Maximum Power Dissipation
TJ
Operating Temperature Range
-55 to 150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
50
°C/W
31
W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2007-06
RATING CHARACTERISTIC CURVES ( CHM4301PAPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
-40
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = -32 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
-1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
-3
V
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = -250 µA
-1
VGS=-10V, ID=-12A
32
42
VGS=-4.5V, ID=-8A
50
65
VDS = -5V, ID = -8A
12
mΩ
S
Dynamic Characteristics
Ciss
1115
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -20V, VGS = 0V,
f = 1.0 MHz
205
pF
120
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
VDS=-20V, ID=-5A
VGS=-10V
19
25
nC
2.1
3.4
t on
Turn-On Time
V DD= -20V
12
25
tr
Rise Time
I D = -5.0A , VGS = -10 V
5
15
t off
Turn-Off Time
RGEN= 3 Ω
40
80
tf
Fall Time
13
30
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = -1.0A , VGS = 0 V (Note 2)
(Note 1)
-20
A
-1.3
V
RATING CHARACTERISTIC CURVES ( CHM4301PAPT )
Typical Electrical Characteristics
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
10
10
V G S =-1 0 , - 6 , - 5 V
-I D , DRAIN CURRENT (A)
-I D , DRAIN CURRENT (A)
8
6
4
VG S =-3 . 0 V
2
8
6
4
TJ=125°C
TJ=-55°C
2
TJ=25°C
0
0
1.0
2.0
3.0
4.0
-VDS , DRAIN-TO-SOURCE VOLTAGE (V)
0
5.0
R DS(on) , NORMALIZED
6
4
2
0
4
8
12
Qg , TOTAL GATE CHARGE (nC)
16
20
Figure 5. Gate Threshold Variation with
Temperature
VDS=VGS
ID=250uA
1.2
THRESHOLD VOLTAGE
VGS=-10V
ID=-12A
1.9
8
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
150
DRAIN-SOURCE ON-RESISTANCE
-VGS , GATE TO SOURCE VOLTAGE (V)
2.2
VDS=-20V
ID=-5A
0
Vth , NORMALIZED GATE-SOURCE
5.0
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Gate Charge
10
1.3
3.0
4.0
2.0
1.0
-VGS , GATE-TO-SOURCE VOLTAGE (V)
0
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
TJ , JUNCTION T EMPERATURE (°C)
150
200