CHENMKO ENTERPRISE CO.,LTD 2N7002ESPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.300 Ampere APPLICATION * Relay driver * High speed line driver * Logic level transistor SOT-23 MARKING .055 (1.40) .047 (1.20) * PK1 D CIRCUIT 3 (3) (2) .103 (2.64) .086 (2.20) .045 (1.15) .033 (0.85) .028 (0.70) .020 (0.50) .002 (0.05) * N-Channel Enhancement with ESD protection in input .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) .007 (0.177) * Rugged and reliable. * High saturation current capability. * ESD protect in input gate 1.5KV .019 (0.50) .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * High density cell design for low R DS(ON). * Suitable for high packing density. .018 (0.30) FEATURE 1G S 2 Dimensions in inches and (millimeters) Absolute Maximum Ratings SOT-23 TA = 25°C unless otherwise noted 2N7002ESPT Units Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 60 V VGSS Gate-Source Voltage - Continuous Symbol Parameter VDSS ±20 - Non Repetitive (tp < 50µs) ID Maximum Drain Current - Continuous - Pulsed PD Maximum Power Dissipation ±40 TA= 25°C 300 TA= 100°C 190 V mA TA= 25°C 830 mW TA=100°C 500 mW TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 °C 350 °C/W Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 2003-10 RATING CHARACTERISTIC CURVES ( 2N7002ESPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min Typ 60 75 Max Units 1.0 µA 10 uA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V TJ =150°C V IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 500 nA IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V -500 nA 2.0 2.5 V Ω ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA 2.8 5.0 VGS = 4.5 V, ID = 75 mA 3.8 5.3 gFS Forward Transconductance VDS = VGS, ID = 1.0 mA VDS = 10 V DS(on), ID = 200 m A 1 100 300 mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time toff Turn-Off Time VDS = 10 V, VGS = 0 V, f = 1.0 MHz 13 40 8 30 pF 4 10 VDD = 50 V, RL = 250 Ω, VGS = 10 V, RGEN = 50 Ω 3 10 nS VDD = 50 V, RL = 250 Ω, VGS = 10 V, RGEN = 50 Ω 9 15 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 300 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 1.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 200 mA (Note 1) 1.5 V trr Reverse Recovery Time Qr Recovery Charge IS = 300 mA, dIS /dt=-100 A/uS VGS = 0 V, V DS = 25 V Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 0.85 30 nS 30 nC RATING CHARACTERISTIC CURVES ( 2N7002ESPT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current . 0.5 10 . 0.3 4.5 0.2 4.0 3.5 0.1 0 8 0.5 1.0 1.5 2.0 V DS , DRAIN-SOURCE VOLTAGE (V) 4.5 5 4 3 10 2 1 5 2.5 0 10 2.5 0.4 0.5 -1 2.0 1.5 1.0 10 -3 min. typ. 10 -4 10 -5 0.5 -2 5 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 10 -6 150 0 0.5 Figure 5. Transfer Characteristics 1.0 1.5 2.0 VGS , GATE-SOURCE VOLTAGE (V) 2.5 3.0 Figure 6. Power Derating Curve 0.5 Pder=Ptot/Ptot(25OC) POWER RATIO (%) 120 VDS >I D XR DSON 0.4 ID , DRAIN CURRENT (A) 0 .2 0.3 I D , DRA IN CURRENT (A) 10 -2 ID, DRAINCURRENT (A) DRAIN-SOURCE ON-RESISTANCE RDS(ON)/RDS(ON)25OC NORMALIZED 0 .1 Figure 4. Sub-Threshold Drain Current with Gate - Source Voltage 3.0 TJ = 25° C 150°C 0.3 0.2 0.1 0 . 6 Figure 3. On-Resistance Variation with Temperature 0 -5 0 TJ = 25° 4.0 7 3.0 0 V GS =3.5V . 9 VGS = 10V 0.4 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) TJ = 25° 0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10 100 80 60 40 20 0 0 25 50 75 100 125 150 TJ , JUNCTION TEM PERATURE (°C) 175 200 RATING CHARACTERISTIC CURVES ( 2N7002ESPT ) Typical Electrical Characteristics (continued) Figure 8. Body Diode Forward Voltage Variation with Drain Current Figure 7. Gate-Source Threshold Voltage with Temperature 3.5 2 2.5 typ. 2.0 1.5 min. 1.0 0.5 0 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 0 .5 TJ = 1 5 0 ° C 0 .1 0 .0 5 0 .0 1 0 .0 0 1 0 .2 150 gfs , FORWARD TRANSCONDUCTANCE (S) CAPACITANCE (pF) C iss 10 1 C oss f = 1 MH z V GS = 0V 1 2 3 V DS C rss 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 0 .6 30 50 .15 .10 T J = 1 5 0 OC .05 0 0 0 .1 0 .2 0 .3 I D , DRAIN CURRENT (A) t on 0.5 t off tr t d(off) tf 90% 90% V OUT D DUT S 0 .4 Figure 12. Switching Waveforms RL G 1 .4 T J = 2 5 OC t d(on) R GEN 1 .2 .20 VDD VGS 1 .25 Figure 11. V IN 0 .8 , BODY DIODE FORWARD VOLTAGE (V) Figure 10. Forward Transconductance 40 2 0 .4 V SD 60 5 25°C 0 .0 0 5 Figure 9. Capacitance Characteristics 20 V GS = 0 V 1 IS , REVERSE DRAIN CURRENT (A) THRESHOLD VOLTAGE (V) VGS(th), GATE-SOURCE I D =1mA, V DS =V GS 3.0 Output, Vout 10% 10% 90% Input, Vin 50% 50% 10% Pulse Width Inverted RATING CHARACTERISTIC CURVES ( 2N7002ESPT ) Typical Electrical Characteristics (continued) Figure 13. Maximum Safe Operating Area 30 20 I D , DRAIN CURRENT (A) 10 5 R DSON =V DS /I D T A =25 O C 10u s 1 0.5 100 100m 0.1 0.05 s 1ms 10 m s us DC 1 2 5 10 V DS , DRAIN-SOURCE VOLTAGE (V) 20 30 60 80 Figure 14. Transient Thermal Response Curve Rth(J-S), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 100 D = 0.5 0 .2 P(pk) 0.1 10 0 .0 5 0 .0 2 t1 Single Pulse t2 Duty Cycle, D = t1 / t 2 2 1 0.00001 0.0001 0.001 0.01 t1 , TIME (sec) 0.1 1.0 10 300