STT800GKXXPT Thyristor-Thyristor Modules Type Symbol ITAV ITRMS ITSM 2 I t VDRM, VRRM VDSM, VRSM Test Conditions Maximum Ratings Unit TC=85oC; 180o half sine wave,50HZ TC=85oC; 180 o Full cycle sine wave,50HZ TVJ=TVJM 180o half sine wave,50HZ single pulse; TC =25oC VR=0; TVJ=TVJM Gate pulse;20V,5W TC =25oC 1us rise time,500us 800 1256 A TVJ=TVJM 180o half sine wave,50HZ ;Gate open TVJ=TVJM 180o half sine wave,50HZ ;single pulse,Gate open 1000/1800 non repetitive, IT=ITAVM 200 TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) VRGM TVJ TVJM Tstg VISOL Weight A/us V/us TVJ=TVJM TVJ=TVJM 40 W W TVJ=TVJM 5 -40...+140 140 -40...+125 50/60Hz, RMS _ IISOL<1mA t=1min t=1s Mounting torque (M6) Terminal connection torque (M8) Md A2s 1000 Si PGM re c (dv/dt)cr A 1100/1900 100 (di/dt)cr A 30.0 35.0 4500 6125 repetitive, IT=960A TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=1A diG/dt=1A/us PGAV VRRM VDRM V 800 1200 1400 1600 1800 tif ier STT800GK08PT STT800GK12PT STT800GK14PT STT800GK16PT STT800GK18PT VRSM VDSM V 900 1300 1500 1700 1900 Colerance:+0.5mm Dimensions in mm (1mm=0.0394") Typ. P1 ©2009 Sirectifier Electronics Technology Corp. 6 V o C 3000 3600 V~ 4.5-7/40-60 11-13/97-115 Nm/lb.in. 3249 g www.sirectifier.com STT800GKXXPT Thyristor-Thyristor Modules Symbol IRRM Test Conditions TVJ=TVJM; VR=VRRM o VT IT=1200A; TVJ=25 C VTO For power-loss calculations only (TVJ=TVJM) Characteristic Values Unit 70 mA 1.55 V 0.9 V 0.21 rT o m TVJ=25 C TVJ=-40oC 2.5 3.5 V VD=12V ; TVJ=25oC TVJ=-40oC 300 400 mA VGD TVJ=TVJM; VD=2/3VDRM 0.5 V IGD TVJ=TVJM; VD=2/3VDRM IGT o tif ier VD=12V ; VGT 10 mA IL TVJ=25 C; tp=30us; VD=12V IG=1A; diG/dt=1A/us 1000 mA IH TVJ=25oC; VD=6V; RGK= 500 mA 10 us 200 us 0.0405 K/W 0.01 K/W 12.7 mm 9.6 mm 59.81 m/s2 o tgd TVJ=25 C; VD=1/2VDRM IG=1A; diG/dt=1A/us tq TVJ=TVJM; IT=500A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=50V/us; VD=2/3VDRM RthJC DC current RthJK DC current Creeping distance on surface dA Creepage distance in air a Maximum allowable acceleration Si re c dS typ. FEATURES * International standard package * Copper base plate * 3UHVVXUH&RQWDFW7HFKQRORJ\ * Isolation voltage 3600 V~ * UL file NO.310749 * RoHs complianFH APPLICATIONS * Motor control, softstarter * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Solid state switches P2 ©2009 Sirectifier Electronics Technology Corp. ADVANTAGES * Simple mounting * Improved temperature and power cycling * Reduced protection circuits www.sirectifier.com STT800GKXXPT Thyristor-Thyristor Modules o.=180o o.=120o o.=90oo o. =60o o. =30 1200 Tj=25 oC Tj=Tj max 10000 Mean on-state current- IT(AV) . A 1000 On-state current- IT . A 8000 6000 4000 2000 0 0.5 1 1.5 2 2.5 Forward Voltage- VF . V Mean on-state current- IT(AV) . A 0 50 60 70 80 90 50 60 70 80 90 100 110 100 Case temperature- TC . O C 110 120 120 130 130 Fig 3 Mean on-state ITAV vs. Case temperature TC for rectangular current waveforms at different conduction angles and for DC, f=50H z o.=30o o.=60o o.=90o o o. =120o o. =180 2500 2000 1500 1000 re c o. -angle of conduction Rectangular current waveforms o. -angle of conduction sinusoidal current waveforms 3000 Mean on-state power dissipation-p T(AV) . w DC 500 200 Case temperature- TC . O C Fig 2 Mean on-state ITAV vs. Case temperature TC for sinusoidal current waveforms at different conduction angles,f=50H z o.=180o o.=120o o.=90oo o. =60o o. =30 1000 400 0 3 Fig 1 On-state characteristics 1500 600 tif ier 0 800 500 0 0 o. -angle of conduction sinusoidal current waveforms 200 400 600 800 Mean on-state current-IT(AV) . A 1000 1200 Fig 4 Mean on-state power dissipation PTAV vs. Mean on-state current ITAV for sinusoidal current waveforms at different conduction angles,f=50Hz Mean on-state power dissipation-p T(AV) . w Si o.=30o o.=60o o.=90o o o. =120o o. =180 3500 3000 DC 2500 2000 1500 1000 o. -angle of conduction Rectangular current waveforms 500 0 0 200 400 600 800 1000 Mean on-state current-IT(AV) . A 1200 Fig 5 Mean on-state power dissipation PTAV vs. Mean on-state current ITAV for rectangular current waveforms at different conduction angles and for DC, f=50H z P3 ©2009 Sirectifier Electronics Technology Corp. www.sirectifier.com STT800GKXXPT Thyristor-Thyristor Modules 8 UFGM ,B 0.04 7 0.035 6 0.03 0.025 3 4 0.02 2 3 0.015 1 2 0.01 1 0.005 0 4 5 10 -3 10 -2 10 -1 10 0 Time- t . s 10 1 10 2 10 3 0 0 1 2 3 4 5 6 7 8 tif ier O Transient thermal impedance .Z thjc . C/W 0.045 10 Fig 7 Gate characteristic Si re c Fig 6 Transient thermal impedance junction to case Z thjc per arm for DC 9 I FGM ,A P4 ©2009 Sirectifier Electronics Technology Corp. www.sirectifier.com