SIRECTIFIER STT800GK16PT

STT800GKXXPT
Thyristor-Thyristor Modules
Type
Symbol
ITAV
ITRMS
ITSM
2
I t
VDRM,
VRRM
VDSM,
VRSM
Test Conditions
Maximum Ratings
Unit
TC=85oC; 180o half sine wave,50HZ
TC=85oC; 180 o Full cycle sine wave,50HZ
TVJ=TVJM 180o half sine wave,50HZ single pulse;
TC =25oC VR=0;
TVJ=TVJM Gate pulse;20V,5W
TC =25oC 1us rise time,500us
800
1256
A
TVJ=TVJM
180o half sine wave,50HZ ;Gate open
TVJ=TVJM
180o half sine wave,50HZ ;single pulse,Gate open
1000/1800
non repetitive, IT=ITAVM
200
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
VRGM
TVJ
TVJM
Tstg
VISOL
Weight
A/us
V/us
TVJ=TVJM
TVJ=TVJM
40
W
W
TVJ=TVJM
5
-40...+140
140
-40...+125
50/60Hz, RMS
_
IISOL<1mA
t=1min
t=1s
Mounting torque (M6)
Terminal connection torque (M8)
Md
A2s
1000
Si
PGM
re
c
(dv/dt)cr
A
1100/1900
100
(di/dt)cr
A
30.0
35.0
4500
6125
repetitive, IT=960A
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=1A
diG/dt=1A/us
PGAV
VRRM
VDRM
V
800
1200
1400
1600
1800
tif
ier
STT800GK08PT
STT800GK12PT
STT800GK14PT
STT800GK16PT
STT800GK18PT
VRSM
VDSM
V
900
1300
1500
1700
1900
Colerance:+0.5mm
Dimensions in mm (1mm=0.0394")
Typ.
P1 ©2009 Sirectifier Electronics Technology Corp.
6
V
o
C
3000
3600
V~
4.5-7/40-60
11-13/97-115
Nm/lb.in.
3249
g
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STT800GKXXPT
Thyristor-Thyristor Modules
Symbol
IRRM
Test Conditions
TVJ=TVJM; VR=VRRM
o
VT
IT=1200A; TVJ=25 C
VTO
For power-loss calculations only (TVJ=TVJM)
Characteristic Values
Unit
70
mA
1.55
V
0.9
V
0.21
rT
o
m
TVJ=25 C
TVJ=-40oC
2.5
3.5
V
VD=12V
;
TVJ=25oC
TVJ=-40oC
300
400
mA
VGD
TVJ=TVJM;
VD=2/3VDRM
0.5
V
IGD
TVJ=TVJM;
VD=2/3VDRM
IGT
o
tif
ier
VD=12V
;
VGT
10
mA
IL
TVJ=25 C; tp=30us; VD=12V
IG=1A; diG/dt=1A/us
1000
mA
IH
TVJ=25oC; VD=6V; RGK=
500
mA
10
us
200
us
0.0405
K/W
0.01
K/W
12.7
mm
9.6
mm
59.81
m/s2
o
tgd
TVJ=25 C; VD=1/2VDRM
IG=1A; diG/dt=1A/us
tq
TVJ=TVJM; IT=500A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=50V/us; VD=2/3VDRM
RthJC
DC current
RthJK
DC current
Creeping distance on surface
dA
Creepage distance in air
a
Maximum allowable acceleration
Si
re
c
dS
typ.
FEATURES
* International standard package
* Copper base plate
* 3UHVVXUH&RQWDFW7HFKQRORJ\
* Isolation voltage 3600 V~
* UL file NO.310749
* RoHs complianFH
APPLICATIONS
* Motor control, softstarter
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Solid state switches
P2 ©2009 Sirectifier Electronics Technology Corp.
ADVANTAGES
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
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STT800GKXXPT
Thyristor-Thyristor Modules
o.=180o
o.=120o
o.=90oo
o. =60o
o. =30
1200
Tj=25 oC Tj=Tj max
10000
Mean on-state current- IT(AV) . A
1000
On-state current- IT . A
8000
6000
4000
2000
0
0.5
1
1.5
2
2.5
Forward Voltage- VF . V
Mean on-state current- IT(AV) . A
0
50
60
70
80
90
50
60
70
80
90
100
110
100
Case temperature- TC . O C
110
120
120
130
130
Fig 3 Mean on-state ITAV vs. Case temperature TC
for rectangular current waveforms at different conduction angles and for DC,
f=50H z
o.=30o
o.=60o
o.=90o o
o. =120o
o. =180
2500
2000
1500
1000
re
c
o. -angle of conduction
Rectangular current waveforms
o. -angle of conduction
sinusoidal current waveforms
3000
Mean on-state power dissipation-p T(AV) . w
DC
500
200
Case temperature- TC . O C
Fig 2 Mean on-state ITAV vs. Case temperature TC
for sinusoidal current waveforms at different conduction angles,f=50H z
o.=180o
o.=120o
o.=90oo
o. =60o
o. =30
1000
400
0
3
Fig 1 On-state characteristics
1500
600
tif
ier
0
800
500
0
0
o. -angle of conduction
sinusoidal current waveforms
200
400
600
800
Mean on-state current-IT(AV) . A
1000
1200
Fig 4 Mean on-state power dissipation PTAV vs. Mean on-state current ITAV
for sinusoidal current waveforms at different conduction angles,f=50Hz
Mean on-state power dissipation-p T(AV) . w
Si
o.=30o
o.=60o
o.=90o o
o. =120o
o. =180
3500
3000
DC
2500
2000
1500
1000
o. -angle of conduction
Rectangular current waveforms
500
0
0
200
400
600
800
1000
Mean on-state current-IT(AV) . A
1200
Fig 5 Mean on-state power dissipation PTAV vs. Mean on-state current ITAV
for rectangular current waveforms at different conduction angles and for DC,
f=50H z
P3 ©2009 Sirectifier Electronics Technology Corp.
www.sirectifier.com
STT800GKXXPT
Thyristor-Thyristor Modules
8
UFGM ,B
0.04
7
0.035
6
0.03
0.025
3
4
0.02
2
3
0.015
1
2
0.01
1
0.005
0
4
5
10 -3
10 -2
10 -1
10 0
Time- t . s
10 1
10 2
10
3
0
0
1
2
3
4
5
6
7
8
tif
ier
O
Transient thermal impedance .Z thjc . C/W
0.045
10
Fig 7 Gate characteristic
Si
re
c
Fig 6 Transient thermal impedance junction to case Z thjc per arm for DC
9
I FGM ,A
P4 ©2009 Sirectifier Electronics Technology Corp.
www.sirectifier.com