Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is internally matched to 50 ohms. Functional Block Diagram Stage 1 XD010-42S-D4F XD010-42S-D4FY Pb RoHS Compliant & Green Package 869-894 MHz Class A 8 W Power Amplifier Module Product Features Stage 2 • Available in RoHS compliant packaging • 50 W RF impedance • 8W Output P1dB Typical • Single Supply Operation : Nominally 28V • High Gain: 30 dB at 880 MHz Bias Network 1 • Advanced, XeMOS II LDMOS FETS Temperature Compensation 2 3 • Temperature Compensation 4 Applications • Base Station PA driver RF in • Repeater VD1 VD2 RF out • CDMA • GSM / EDGE Case Flange = Ground Key Specifications Symbol Frequency Parameter Unit Min. Frequency of Operation MHz 869 Typ. 894 P1dB Output Power at 1dB Compression, 880 MHz W 7 Gain Gain at 1W Output Power (CW) dB 28 Over Frequency at 1W Output (CW) dB Input Return Loss at 1W Output (CW) (50Ω Ref) dB 14 Drain Efficiency at 8W CW Output % 22 Drain Efficiency at 1W CDMA (Single Carrier IS-95) % 3.5 ACPR at 1W CDMA Output (Single Carrier IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth) dB -50 ALT-1 at 1W CDMA (Single Carrier IS-95, 9 Ch Fwd, Offset=1980KHz, ACPR Integrated Bandwidth) dB -75 Gain Flatness IRL Efficiency Linearity 8 30 0.4 24 dB -28 -32 3rd Order IMD at 1W PEP (Two Tone 1MHz Spacing) dBc -40 -50 Signal Delay from Pin 1 to Pin 4 nS 3.9 Deviation from Linear Phase (Peak to Peak) Deg 0.5 Thermal Resistance Stage 1 (Junction to Case) ºC/W 11 Thermal Stage (Junction ºC/W RTH, j-2 Test Conditions: Zin = Zout = 50Ω,Resistance VDD = 28.0V, IDQ12 = 230mA,to ICase) DQ2 = 700mA, TFlange = 25ºC 4 Phase Linearity RTH, j-l 1 20 3rd Order IMD at 8W PEP (Two Tone 1MHz Spacing) Delay Max. The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102938 Rev E XD010-42S-D4F 869-894 MHz 8W Power Amp Module Quality Specifications Parameter ESD Rating Human Body Model, JEDEC Document - JESD22-A114-B 85o MTTF o C Leadframe, 200 C Channel Unit Typical V 8000 Hours 1.2 X 106 Pin Description Pin # Function Description 1 RF Input Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. 2 VD1 This is the drain voltage for the first stage. Nominally +28Vdc 3 VD2 This is the drain voltage for the 2nd stage of the amplifier module. The 2nd stage gate bias is temperature compensated to maintain constant quiscent drain current over the operating temperature range. See Note 1. 4 RF Output Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. Flange Gnd Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for optimum thermal and RF performance. See mounting instructions in application note AN-060 on Sirenza’s web site. Simplified Device Schematic 2 VD1 3 VD2 Temperature Bias Network Compensation RFout Q2 Q1 4 RFin 1 Case Flange = Ground Absolute Maximum Ratings Parameters Value Unit 1st Stage Bias Voltage (VD1 ) 35 V 2nd Stage Bias Voltage (VD2) 35 V RF Input Power +20 dBm Load Impedance for Continuous Operation Without Damage 5:1 VSWR Output Device Channel Temperature +200 ºC +90 ºC Operating Temperature Range -20 to +90 ºC Storage Temperature Range -40 to +100 ºC Base Plate Temperature: Operating with no RF Present Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one. Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 Note 1: The internal generated gate voltage is thermally compensated to maintain constant quiescent current over the temperature range listed in the data sheet. No compensation is provided for gain changes with temperature. This can only be provided with AGC external to the module. Note 2: Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time-varying waveforms. Note 3: This module was designed to have it's leads hand soldered to an adjacent PCB. The maximum soldering iron tip temperature should not exceed 700° F, and the soldering iron tip should not be in direct contact with the lead for longer than 10 seconds. Refer to app note AN054 (www.sirenza.com) for further installation instructions. http://www.sirenza.com EDS-102938 Rev E XD010-42S-D4F 869-894 MHz 8W Power Amp Module Typical Performance Curves -10 29 -20 28 -30 27 -40 Two Tone Gain IMD 1MHz Spacing ACP ALT1 25 24 -50 -60 -70 23 -80 2 3 4 5 25 20 1.5 1.3 5 1.1 0 6 0.9 0 2 4 -35 -40 -45 -50 Gain (dB) ACP (dB), ALT1 (dB), IMD (dBc) 8 10 12 Gain and IMD vs. Output Power and Temperature Freq=881 MHz, Vdd=28 V, TFlange=-20oC, 25oC, 90oC -55 Two Tone IMD ACP ALT1 -60 -65 -70 33 -10 31 -15 29 -20 27 -25 25 -30 23 19 17 -75 15 -80 865 13 885 890 895 -35 Gain @-20°C Gain @ 25°C Gain @ 90°C IMD @-20°C IMD @ 25°C IMD @ 90°C 21 900 -40 -45 -50 -55 -60 0 1 2 Frequency (MHz) 3 4 5 6 Output Power (W) Gain and IMDs vs. Output Power and Voltage Freq=881 and 882 MHz, Vdd=24 V, 28 V, 32 V TFlange=25oC Gain and Input Return Loss vs. Frequency Output Power=1 Watt, Vdd=28 V, TFlange=25oC 32 -5 31 -15 29 -10 30 -16 -15 29 -17 Gain @ 24 Volts Gain @ 28 Volts Gain @ 32 Volts IMD @ 24 Volts IMD @ 28 Volts IMD @ 32 Volts 27 26 25 -20 -25 -30 Gain (dB) 0 30 IMD (dBc) 31 28 Gain (dB) 6 Output Power (W) -30 880 1.7 10 Two Tone IMD, ACP, ALT1 vs. Frequency Output Power=1 Watt, Vdd=28 V, TFlange=25oC IS95 standard, channel BW= 1.23 MHz, ADJ BW= 30 KHz@ 750 KHz spacing. ALT1 BW= 30 KHz@1980 KHz spacing. IMD@1 MHz spacing. 875 1.9 15 Output Power (W) 870 2.1 -14 28 -18 27 Gain -19 26 Input Return Loss -20 24 -35 25 -21 23 -40 24 -22 22 -45 23 -23 21 -50 22 865 0 1 2 3 4 5 6 Output Power (W) 303 S. Technology Court Broomfield, CO 80021 IMD (dBc) 1 30 2.3 870 875 880 885 890 895 -24 900 Frequency (MHz) Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-102938 Rev E Input Return Loss (dB) 0 2.5 Efficiency @-20°C Efficiency @25°C Efficiency @90°C Id @-20°C Id @ 25°C Id @ 90°C 35 Idd (Amps) 30 Efficiency (%) 0 26 Efficiency and Idd vs. Output Pow er and Tem perature Freq=881 MHz, Vdd=28 V, TFlange=-20oC, 25oC, 90oC 40 31 ACP (dB), ALT1 (dB), IMD (dBc) Gain (dB) Gain, IMD, ACP, ALT1 vs. Output Power Freq=881 MHz, Vdd=28V, TFlange=25oC, IS-95 ADJ BW=30KHz @ 750 KHz spacing ALT1 BW=30KHz @1980 KHz spacing IMD @ 1 MHz spacing XD010-42S-D4F 869-894 MHz 8W Power Amp Module Test Board Schematic with module connections shown Test Board Bill of Materials Component Description Manufacturer PCB Rogers 4350, er=3.5 Thickness=30mils Rogers J1, J2 SMA, RF, Panel Mount Tab W / Flange Johnson J3 MTA Post Header, 6 Pin, Rectangle, Polarized, Surface Mount AMP C1, C10 Cap, 10mF, 35V, 10%, Tant, Elect, D Kemet C2, C20 Cap, 0.1mF, 100V, 10%, 1206 Johanson C3, C30 Cap, 1000pF, 100V, 10%, 1206 Johanson C25, C26 Cap, 68pF, 250V, 5%, 0603 ATC C21, C22 Cap, 0.1mF, 100V, 10%, 0805 Panasonic C23, C24 Cap, 1000pF, 100V, 10%, 0603 AVX Mounting Screws 4-40 X 0.250” Various Test Board Layout To receive Gerber files, DXF drawings, a detailed BOM, and assembly recommendations for the test board with fixture, contact applications support at [email protected]. Data sheet for evaluation circuit (XD010-EVAL) available from Sirenza website. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-102938 Rev E XD010-42S-D4F 869-894 MHz 8W Power Amp Module Package Outline Drawing Recommended PCB Cutout and Landing Pads for the D4F Package Note 3: Dimensions are in inches Refer to Application note AN-060 “Installation Instructions for XD Module Series” for additional mounting info. App note availbale at at www.sirenza.com 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-102938 Rev E