SIRENZA SDM-08060-B1FY

SDM-08060-B1F
SDM-08060-B1FY
Product Description
Sirenza Microdevices’ SDM-08060-B1F 65W power module is a
robust, impedance matched, single-stage, push-pull Class AB amplifier
module suitable for use as a power amplifier driver or output stage.
The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high
power applications requiring high efficiency, excellent linearity, and
unit-to-unit repeatability. It is internally matched to 50 ohms.
Pb
RoHS Compliant
& Green Package
869-894 MHz Class AB
65W Power Amplifier Module
Functional Block Diagram
Vgs
+3V DC to +6 V DC
+28V DC
1
Vds1
180
o
0
o
Gnd
Gnd
Balun
Balun
RFin
RFout
Gnd
Gnd
0
Vgs 2
o
180
o
+3V DC to +6 V DC
Vds 2
+28V DC
Product Features
•
•
•
•
•
•
•
Available in RoHS compliant packaging
50 W RF impedance
65W Output P1dB
Single Supply Operation : Nominally 28V
High Gain: 17 dB at 880 MHz
High Efficiency: 46% at 880 MHz
ESD Protection: JEDEC Class 2 (2000V HBM)
Applications
•
•
•
•
Case Flange = Ground
Key Specifications
Symbol
Frequency
Base Station PA driver
Repeater
CDMA
GSM / EDGE
Parameter
Units
Min.
Typ.
Max.
Frequency of Operation
MHz
869
-
894
P1dB
Output Power at 1dB Compression, 881 MHz
W
60
65
-
Gain
Gain at 12W CDMA Output (Single Carrier IS-95), 881MHz
dB
16
17
-
Gain Flatness
Peak to Peak Gain Variation, 869 - 894MHz
dB
-
0.3
0.5
Efficiency
Drain Efficiency at 60W PEP, 880MHz and 881MHz
%
32
34
-
Efficiency
Drain Efficiency at 60W CW, 880MHz
%
Input Return Loss 12W CW Output Power, 869 - 894MHz
dB
3rd Order IMD Product, 60W PEP, 880MHz and 881MHz
Signal Delay from Pin 3 to Pin 8
IRL
IMD
Delay
Phase Linearity
RTH
46
-
-
-15
-10
dBc
-
-31
-28
nS
-
4.0
-
Deviation from Linear Phase (Peak to Peak)
Deg
-
0.5
-
Thermal Resistance (Junction to Case)
ºC/W
1.5
T TFlange = 25ºC
Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = IDQ2 =300mA
Quality Specifications
Parameter
ESD Rating
MTTF
Description
Unit
Human Body Model
Volts
Typical
2000
200oC Channel
Hours
1.2 X 106
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104208 Rev F
SDM-08060-B1F 869-894 MHz 65W Power Amp Module
Pin Description
Pin #
Function
1
VGS1
Description
LDMOS FET Q1 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4
2,4,7,9
Ground
Module Topside ground.
3
RF Input
Internally DC blocked
5
VGS2
LDMOS FET Q2 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4
6
VD2
LDMOS FET Q2 drain bias. See Note 1.
8
RF Output
10
VD1
Flange
Ground
Internally DC blocked
LDMOS FET Q1 drain bias. See Note 1.
Baseplate provides electrical ground and a thermal transfer path for the device. Proper mounting assures
optimal performance and the highest reliability. See Sirenza applications note AN-054 Detailed Installation Instructions for
Power Modules.
Simplified Device Schematic
1
Note 1:
Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the VD leads to
accommodate modulated signals.
10
2
9
Q1
Note 2:
Gate voltage must be applied to VGS leads
simultaneously with or after application of drain voltage to prevent potentially destructive oscillations. Bias
voltages should never be applied to a module unless it is properly terminated on both input and output.
8
3
Q2
4
7
6
5
Case Flange = Ground
Absolute Maximum Ratings
Parameters
Value
Unit
Drain Voltage (VDD)
35
V
RF Input Power
+37
dBm
Load Impedance for Continuous Operation Without
Damage
5:1
VSWR
Control (Gate) Voltage, VDD = 0 VDC
15
V
Output Device Channel Temperature
+200
ºC
Operating Temperature Range
-20 to
+90
ºC
Storage Temperature Range
-40 to
+100
ºC
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one.
Note 3:
The required VGS corresponding to a specific IDQ will vary from
module to module and may differ between VGS1 and VGS2 on
the same module by as much as ±0.10 volts due to the normal
die-to-die variation in threshold voltage.
LDMOS transistors.
Note 4:
The threshold voltage (VGSTH) of LDMOS transistors varies with
device temperature. External temperature compensation may
be required. See Sirenza application notes AN-067 LDMOS
Bias Temperature
Compensation.
Note 5:
This module was designed to have it's leads hand
soldered to an adjacent PCB. The maximum soldering iron tip
temperature should not exceed 700° F, and the soldering iron
tip should not be in direct contact with the lead for longer than
10 seconds. Refer to app note AN054 (www.sirenza.com) for
further installation
instructions.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-104208 Rev F
SDM-08060-B1F 869-894 MHz 65W Power Amp Module
Typical Performance Curves
2 Tone Gain, Efficiency, IMDs vs Pout
Vdd=28V, Idq=600mA, Freq=881 MHz, Delta F=1 MHz
35
-20
30
-30
25
-40
20
-50
15
-60
10
-70
Efficiency
IMD5
IRL
0
850
860
870
880
890
900
Gain
IMD3
IMD7
40
-30
35
-35
30
-40
25
-45
20
-50
15
-55
10
-60
-80
5
-65
-90
910
0
-70
0
20
Frequency (MHz)
40
60
80
Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency
Vdd=28V, Idq=600mA, Pout=60W
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=600mA, Freq=881 MHz
50
0
20
60
45
-2
19
55
18
50
17
45
16
40
15
14
35
30
35
-4
-6
30
-8
25
-10
20
-12
Gain (dB)
Gain
Efficiency
IRL
40
IRL (dB)
Gain (dB), Efficiency (%)
-25
Efficiency
IMD5
Gain
13
25
Efficiency
12
20
11
15
15
-14
10
-16
10
10
5
-18
9
8
5
0
0
850
860
870
880
890
900
-20
910
20
40
60
80
Pout (W)
Frequency (MHz)
303 S. Technology Court
Broomfield, CO 80021
0
Efficiency (%)
Gain
IMD3
IMD7
5
45
IMD (dBc)
-10
Gain (dB), Efficiency (%)
40
IMD (dBc), IRL (dB)
Gain (dB), Efficiency (%)
2 Tone Gain, Efficiency, IMDs, IRL vs Frequency
Vdd=28V, Idq=600mA, Pout=60W PEP, Delta F=1 MHz
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-104208 Rev F
SDM-08060-B1F 869-894 MHz 65W Power Amp Module
Typical Performance Curves (cont’d)
Gain (dB), Efficiency (%)
60
Efficiency
IM3
IM7
0
70
-10
60
50
-20
40
-30
30
-40
20
-50
10
0
19
20
21
22
23
24
25
26
27
28
29
-5
50
-10
40
-15
30
-20
20
-25
-60
10
-30
-70
0
-35
18
30
20
22
24
26
28
30
Vds (Volts)
Vds (Volts)
CW Gain vs Pout for various Idq
Vds=28V, Freq=881 MHz
IMD3 vs Pout for various Idq
Vds=28V, Freq=881 MHz, Delta F=1 MHz
-20
19
-25
18.5
Idq=1.6A
Idq=1.4A
Idq=1.2A
-30
18
Idq=1.0A
-35
Gain (dB)
Gain (dB)
0
Gain
Efficiency
IRL
IRL (dB)
Gain
IRL
IM5
Gain (dB), Efficiency (%)
70
CW Gain, Efficiency, IRL vs Supply Voltage
Pout=60W, Idq=600mA, Freq=881 MHz
IRL (dB), IMD (dBc)
Two Tone Gain, Efficiency, IRL, IMDs vs Supply Voltage
Pout=60W PEP, Idq=600mA, Freq=881 MHz,
Delta F=1 MHz
17.5
Idq=0.8A
Idq=0.4A
Idq=0.5A
-40
Idq=0.6A
-45
17
Idq= 0.8A
-50
16.5
Idq=0.7A
-55
16
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75
Pout (W)
-60
0
5
10 15 20 25 30
35 40 45 50 55 60 65
Pout (W)
Note:
Evaluation test fixture information available on Sirenza Website, referred to as SDM-EVAL.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-104208 Rev F
SDM-08060-B1F 869-894 MHz 65W Power Amp Module
Package Outline Drawing
Note:
Refer to Application note AN054, “Detailed Installation Instructions for Power Modules” for detailed mounting information.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-104208 Rev F