High Power DP3T Switch with Logic Control CXM3513ER Description The CXM3513ER can be used in wireless communication systems, for example, triple-band W-CDMA handsets. This IC has a decoder with 3 CMOS control inputs. The Sony JPHEMT process is used for low insertion loss and low distortion characteristic. (Applications: Antenna switch for cellular handsets, triple-band W-CDMA) Features Low insertion loss: 0.36dB @900MHz, 0.43dB @1.95GHz 3 CMOS compatible control lines Package Small package size: 20-pin VQFN (2.4mm × 3.2mm × 0.9mm) Structure GaAs JPHEMT MMIC Absolute Maximum Ratings (Ta = 25°C) Bias voltage VDD 7 V Control voltage Vctl 5 V Operating temperature Topr –35 to +85 °C Storage temperature Tstg –65 to +150 °C This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E06636A69 CXM3513ER RF3 11 GND 12 GND RF2 GND GND Block Diagram and Pin Configuration 10 9 8 7 F11 F10 13 RF1 14 GND 5 EXT 4 GND 3 ANT 2 GND 1 GND F5 F2 GND 6 F8 F6 F3 F9 17 18 19 20 CTLA 16 CTLB GND F1 CTLC 15 F7 VDD GND F4 -2- CXM3513ER Recommended Circuit RF Port CRF 8 7 GND GND 11 RF3 9 RF2 CRF RF Port 10 GND 1000pF GND 6 1000pF CRF 12 GND RF Port EXT 5 22pF 13 GND GND 4 14 RF1 ANT 3 CRF RF Port CRF 1000pF 22pF CTLC CTLB CTLA 16 GND GND 2 VDD 15 GND 17 18 19 20 GND 1 Cbypass (Cbypass) (Cbypass) (Cbypass) 100pF (100pF) VDD (100pF) Vctl (100pF) Vctl Vctl When using this IC, the following external components should be used: CRF: This capacitor is used for RF decoupling and must be used for all applications. Cbypass: This capacitor is used for DC line filtering. -3- RF Port CXM3513ER Truth Table State CTL A CTL B CTL C Mode F1 F2 ON F3 F4 F5 1 H L L ANT-RF3 OFF 2 L L L EXT-RF3 OFF OFF OFF OFF 3 H L H ANT-RF2 OFF OFF 4 L L H EXT-RF2 OFF OFF OFF OFF OFF 5 H H L ANT-RF1 ON 6 L H L EXT-RF1 OFF OFF OFF F6 ON ON OFF F9 F10 F11 ON ON OFF ON ON OFF ON OFF ON ON ON ON OFF ON OFF ON ON OFF OFF ON ON ON OFF OFF ON ON OFF OFF OFF OFF ON OFF OFF OFF OFF OFF OFF ON OFF OFF (Ta = –35 to +85°C) Min. Typ. Max. Unit Vctl (H) 1.44 1.85 VDD V Vctl (L) 0 — 0.3 V 2.7 2.85 3.2 V VDD F8 OFF OFF OFF OFF OFF DC Bias Conditions Item F7 -4- ON CXM3513ER Electrical Characteristic (Ta = 25°C, VDD = 2.85V) Item Insertion Loss Isolation VSWR Symbol IL ISO VSWR State Typ. Max. Unit ANT-RF1 830 to 885MHz 0.36 0.56 dB EXT-RF1 0.36 0.56 dB ANT-RF2 1750 to 1880MHz 0.39 0.64 dB EXT-RF2 1750 to 1880MHz 0.40 0.65 dB ANT-RF3 1920 to 2170MHz 0.43 0.68 dB EXT-RF3 0.45 0.70 dB Min. 830 to 885MHz 1920 to 2170MHz ANT-RF1 830 to 885MHz 25 30 dB EXT-RF1 28 33 dB ANT-RF2 1750 to 1880MHz 28 33 dB EXT-RF2 1750 to 1880MHz 25 30 dB ANT-RF3 1920 to 2170MHz 24 29 dB EXT-RF3 24 29 dB 830 to 885MHz 1920 to 2170MHz ANT 50Ω 1.1 1.4 — EXT 50Ω 1.1 1.4 — VDD = 2.85V 32 1dB compression P1dB input power Switching speed Condition TSW dBm 5 10 us ACLR1 ±5MHz, 3.84MHz BW, *1, *2, *3 –60 –50 dBc ACLR2 ±10MHz, 3.84MHz BW, *1, *2, *3 –65 –55 dBc 2fo *1, *2, *3 –90 –70 dBc 3fo *1, *2, *3 –90 –70 dBc Bias current Idd VDD = 2.85V 105 210 μA Control current Ictl Vctl (H) = 2.85V 0.1 5 μA ANT-RF1 fud = fRx – fTx, *4 –107 –97 dBm *4 –105 –95 dBm ANT-RF2 fud = fRx – fTx, *5 –105 –95 dBm fud = fRx – fTx, *5 –105 –95 dBm ANT-RF3 fud = fRx – fTx, *6 –110 –100 dBm *6 –107 –97 dBm ANT-RF1 fud = fRx + fTx, *4 –115 –105 dBm fud = fRx + fTx, *4 –115 –105 dBm ANT-RF2 fud = fRx + fTx, *5 –115 –105 dBm *5 –110 –100 dBm ANT-RF3 fud = fRx + fTx, *6 –115 –105 dBm fud = fRx + fTx, *6 –110 –100 dBm ACLR Harmonics IMD2_1_1 IMD2_1_2 IMD2_1_3 IMD2 IMD2_2_1 IMD2_2_2 IMD2_2_3 EXT-RF1 EXT-RF2 EXT-RF3 EXT-RF1 EXT-RF2 EXT-RF3 fud = fRx – fTx, fud = fRx – fTx, fud = fRx + fTx, -5- CXM3513ER Item Symbol IMD3_1_1 IMD3_1_2 IMD3_1_3 IMD3 IMD3_2_1 IMD3_2_2 IMD3_2_3 *1 *2 *3 *4 *5 *6 State Typ. Max. Unit ANT-RF1 fud = 2 × fTx – fRx, *4 –107 –97 dBm fud = 2 × fTx – fRx, *4 –107 –97 dBm ANT-RF2 fud = 2 × fTx – fRx, *5 EXT-RF1 Condition Min. –107 –97 dBm *5 –107 –97 dBm ANT-RF3 fud = 2 × fTx – fRx, *6 –107 –97 dBm fud = 2 × fTx – fRx, *6 –107 –97 dBm ANT-RF1 fud = 2 × fTx + fRx, *4 EXT-RF2 EXT-RF3 fud = 2 × fTx – fRx, –110 –100 dBm *4 –110 –100 dBm ANT-RF2 fud = 2 × fTx + fRx, *5 –110 –100 dBm fud = 2 × fTx + fRx, *5 –110 –100 dBm ANT-RF3 fud = 2 × fTx + fRx, *6 –110 –100 dBm –110 –100 dBm EXT-RF1 EXT-RF2 EXT-RF3 fud = 2 × fTx + fRx, fud = 2 × fTx + fRx, *6 Pin = 25dBm, Vctl = 0/1.85V, VDD = 2.85V, 830 to 840MHz Pin = 25dBm, Vctl = 0/1.85V, VDD = 2.85V, 1750 to 1785MHz Pin = 25dBm, Vctl = 0/1.85V, VDD = 2.85V, 1920 to 1980MHz Pin = 20dBm, Vctl = 0/1.85V, VDD = 2.85V, fTx = 830 to 840MHz, Pin = –15dBm, fRx = 875 to 885MHz Pin = 20dBm, Vctl = 0/1.85V, VDD = 2.85V, fTx = 1750 to 1785MHz, Pin = –15dBm, fRx = 1845 to 1880MHz Pin = 20dBm, Vctl = 0/1.85V, VDD = 2.85V, fTx = 1920 to 1980MHz, Pin = –15dBm, fRx = 2110 to 2170MHz -6- CXM3513ER Package Outline (Unit: mm) LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL -7- SPEC. COPPER ALLOY SOLDER COMPOSITION Sn-Bi Bi:1-4wt% PLATING THICKNESS 5-18µm Sony Corporation