SONY CXM3513ER

High Power DP3T Switch with Logic Control
CXM3513ER
Description
The CXM3513ER can be used in wireless communication systems, for example, triple-band W-CDMA
handsets. This IC has a decoder with 3 CMOS control inputs. The Sony JPHEMT process is used for low
insertion loss and low distortion characteristic.
(Applications: Antenna switch for cellular handsets, triple-band W-CDMA)
Features
‹ Low insertion loss: 0.36dB @900MHz, 0.43dB @1.95GHz
‹ 3 CMOS compatible control lines
Package
Small package size: 20-pin VQFN (2.4mm × 3.2mm × 0.9mm)
Structure
GaAs JPHEMT MMIC
Absolute Maximum Ratings
(Ta = 25°C)
Š Bias voltage
VDD
7
V
Š Control voltage
Vctl
5
V
Š Operating temperature
Topr
–35 to +85
°C
Š Storage temperature
Tstg
–65 to +150
°C
This IC is ESD sensitive device. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E06636A69
CXM3513ER
RF3
11
GND
12
GND
RF2
GND
GND
Block Diagram and Pin Configuration
10
9
8
7
F11
F10
13
RF1
14
GND
5
EXT
4
GND
3
ANT
2
GND
1
GND
F5
F2
GND
6
F8
F6
F3
F9
17
18
19
20
CTLA
16
CTLB
GND
F1
CTLC
15
F7
VDD
GND
F4
-2-
CXM3513ER
Recommended Circuit
RF Port
CRF
8
7
GND
GND
11 RF3
9
RF2
CRF
RF Port
10
GND
1000pF
GND 6
1000pF
CRF
12 GND
RF Port
EXT 5
22pF
13 GND
GND 4
14 RF1
ANT 3
CRF
RF Port
CRF
1000pF
22pF
CTLC
CTLB
CTLA
16 GND
GND 2
VDD
15 GND
17
18
19
20
GND 1
Cbypass (Cbypass) (Cbypass) (Cbypass)
100pF
(100pF)
VDD
(100pF)
Vctl
(100pF)
Vctl
Vctl
When using this IC, the following external components should be used:
CRF: This capacitor is used for RF decoupling and must be used for all applications.
Cbypass: This capacitor is used for DC line filtering.
-3-
RF Port
CXM3513ER
Truth Table
State
CTL
A
CTL
B
CTL
C
Mode
F1
F2
ON
F3
F4
F5
1
H
L
L
ANT-RF3 OFF
2
L
L
L
EXT-RF3 OFF OFF OFF OFF
3
H
L
H
ANT-RF2 OFF OFF
4
L
L
H
EXT-RF2 OFF OFF OFF OFF OFF
5
H
H
L
ANT-RF1 ON
6
L
H
L
EXT-RF1 OFF OFF OFF
F6
ON
ON
OFF
F9
F10
F11
ON
ON
OFF
ON
ON OFF
ON
OFF
ON
ON
ON
ON
OFF
ON OFF
ON
ON
OFF
OFF
ON
ON
ON OFF OFF
ON
ON
OFF OFF OFF OFF
ON
OFF OFF OFF OFF OFF OFF
ON
OFF OFF
(Ta = –35 to +85°C)
Min.
Typ.
Max.
Unit
Vctl (H)
1.44
1.85
VDD
V
Vctl (L)
0
—
0.3
V
2.7
2.85
3.2
V
VDD
F8
OFF OFF OFF OFF OFF
DC Bias Conditions
Item
F7
-4-
ON
CXM3513ER
Electrical Characteristic
(Ta = 25°C, VDD = 2.85V)
Item
Insertion Loss
Isolation
VSWR
Symbol
IL
ISO
VSWR
State
Typ.
Max.
Unit
ANT-RF1 830 to 885MHz
0.36
0.56
dB
EXT-RF1
0.36
0.56
dB
ANT-RF2 1750 to 1880MHz
0.39
0.64
dB
EXT-RF2
1750 to 1880MHz
0.40
0.65
dB
ANT-RF3 1920 to 2170MHz
0.43
0.68
dB
EXT-RF3
0.45
0.70
dB
Min.
830 to 885MHz
1920 to 2170MHz
ANT-RF1 830 to 885MHz
25
30
dB
EXT-RF1
28
33
dB
ANT-RF2 1750 to 1880MHz
28
33
dB
EXT-RF2
1750 to 1880MHz
25
30
dB
ANT-RF3 1920 to 2170MHz
24
29
dB
EXT-RF3
24
29
dB
830 to 885MHz
1920 to 2170MHz
ANT
50Ω
1.1
1.4
—
EXT
50Ω
1.1
1.4
—
VDD = 2.85V
32
1dB compression
P1dB
input power
Switching speed
Condition
TSW
dBm
5
10
us
ACLR1
±5MHz, 3.84MHz BW, *1, *2, *3
–60
–50
dBc
ACLR2
±10MHz, 3.84MHz BW, *1, *2, *3
–65
–55
dBc
2fo
*1, *2, *3
–90
–70
dBc
3fo
*1, *2, *3
–90
–70
dBc
Bias current
Idd
VDD = 2.85V
105
210
μA
Control current
Ictl
Vctl (H) = 2.85V
0.1
5
μA
ANT-RF1 fud = fRx – fTx, *4
–107
–97
dBm
*4
–105
–95
dBm
ANT-RF2 fud = fRx – fTx, *5
–105
–95
dBm
fud = fRx – fTx, *5
–105
–95
dBm
ANT-RF3 fud = fRx – fTx, *6
–110
–100
dBm
*6
–107
–97
dBm
ANT-RF1 fud = fRx + fTx, *4
–115
–105
dBm
fud = fRx + fTx, *4
–115
–105
dBm
ANT-RF2 fud = fRx + fTx, *5
–115
–105
dBm
*5
–110
–100
dBm
ANT-RF3 fud = fRx + fTx, *6
–115
–105
dBm
fud = fRx + fTx, *6
–110
–100
dBm
ACLR
Harmonics
IMD2_1_1
IMD2_1_2
IMD2_1_3
IMD2
IMD2_2_1
IMD2_2_2
IMD2_2_3
EXT-RF1
EXT-RF2
EXT-RF3
EXT-RF1
EXT-RF2
EXT-RF3
fud = fRx – fTx,
fud = fRx – fTx,
fud = fRx + fTx,
-5-
CXM3513ER
Item
Symbol
IMD3_1_1
IMD3_1_2
IMD3_1_3
IMD3
IMD3_2_1
IMD3_2_2
IMD3_2_3
*1
*2
*3
*4
*5
*6
State
Typ.
Max.
Unit
ANT-RF1 fud = 2 × fTx – fRx, *4
–107
–97
dBm
fud = 2 × fTx – fRx, *4
–107
–97
dBm
ANT-RF2 fud = 2 × fTx – fRx, *5
EXT-RF1
Condition
Min.
–107
–97
dBm
*5
–107
–97
dBm
ANT-RF3 fud = 2 × fTx – fRx, *6
–107
–97
dBm
fud = 2 × fTx – fRx, *6
–107
–97
dBm
ANT-RF1 fud = 2 × fTx + fRx, *4
EXT-RF2
EXT-RF3
fud = 2 × fTx – fRx,
–110
–100
dBm
*4
–110
–100
dBm
ANT-RF2 fud = 2 × fTx + fRx, *5
–110
–100
dBm
fud = 2 × fTx + fRx, *5
–110
–100
dBm
ANT-RF3 fud = 2 × fTx + fRx, *6
–110
–100
dBm
–110
–100
dBm
EXT-RF1
EXT-RF2
EXT-RF3
fud = 2 × fTx + fRx,
fud = 2 × fTx + fRx,
*6
Pin = 25dBm, Vctl = 0/1.85V, VDD = 2.85V, 830 to 840MHz
Pin = 25dBm, Vctl = 0/1.85V, VDD = 2.85V, 1750 to 1785MHz
Pin = 25dBm, Vctl = 0/1.85V, VDD = 2.85V, 1920 to 1980MHz
Pin = 20dBm, Vctl = 0/1.85V, VDD = 2.85V, fTx = 830 to 840MHz, Pin = –15dBm, fRx = 875 to 885MHz
Pin = 20dBm, Vctl = 0/1.85V, VDD = 2.85V, fTx = 1750 to 1785MHz, Pin = –15dBm, fRx = 1845 to 1880MHz
Pin = 20dBm, Vctl = 0/1.85V, VDD = 2.85V, fTx = 1920 to 1980MHz, Pin = –15dBm, fRx = 2110 to 2170MHz
-6-
CXM3513ER
Package Outline
(Unit: mm)
LEAD PLATING SPECIFICATIONS
ITEM
LEAD MATERIAL
-7-
SPEC.
COPPER ALLOY
SOLDER COMPOSITION
Sn-Bi Bi:1-4wt%
PLATING THICKNESS
5-18µm
Sony Corporation