RB551V-30 SOD-323 Plastic-Encapsulate Diode PRODUCT SUMMARY RB551V-30 Schottky Diodes SOD-323 FEATURES + High current rectifier Schottky diode Low voltage, low inductance For power supply MARKING: D Pb-free; RoHS-compliant MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Single Diode @ TA = 25oC Parameter Symbol Limits Unit Peak reverse voltage VRM 30 V DC reverse voltage VR 20 V Mean rectifying current IO 0.5 A IFSM 2 A Junction temperature Tj 125 ℃ Storage temperature Tstg -40~+125 ℃ Peak forward surge current ELECTRICAL RATINGS @ TA = 25oC Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.36 0.47 V IF=100mA IF=500mA Reverse current IR 100 µA VR=20V 02/09/2007 Rev.1.00 www.SiliconStandard.com 1 RB551V-30 SOD-323 Plastic-Encapsulate Diode TYPICAL CHARACTERISTICS o Electrical Characteristic curves (Ta = 25 C) Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 02/09/2007 Rev.1.00 www.SiliconStandard.com 2