SSC RB551V-30

RB551V-30
SOD-323 Plastic-Encapsulate Diode
PRODUCT SUMMARY
RB551V-30 Schottky Diodes
SOD-323
FEATURES
+
High current rectifier Schottky diode
Low voltage, low inductance
For power supply
MARKING: D
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Single Diode @ TA = 25oC
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
30
V
DC reverse voltage
VR
20
V
Mean rectifying current
IO
0.5
A
IFSM
2
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40~+125
℃
Peak forward surge current
ELECTRICAL RATINGS
@ TA = 25oC
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
VF
0.36
0.47
V
IF=100mA
IF=500mA
Reverse current
IR
100
µA
VR=20V
02/09/2007 Rev.1.00
www.SiliconStandard.com
1
RB551V-30
SOD-323 Plastic-Encapsulate Diode
TYPICAL CHARACTERISTICS
o
Electrical Characteristic curves (Ta = 25 C)
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the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
02/09/2007 Rev.1.00
www.SiliconStandard.com
2