2N7002 N-CHANNEL MOSFET PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES 1. GATE 2. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability 3. DRAIN Pb-free; RoHS-compliant MARKING: 7002 MAXIMUM RATINGS (TA=25 oC unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 08/04/2007 Rev.1.00 www.SiliconStandard.com 1 2N7002 ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT VGS=0 V, ID=10 μA 60 Vth(GS) VDS=VGS, ID=250 μA 1 Gate-body Leakage lGSS VDS=0 V, VGS=±25 V Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 rDS(0n) VGS=10 V, ID=500mA 1 7.5 Drain-Source On-Resistance VGS=5 V, ID=50mA 1 7.5 VDS=10 V, ID=200mA 80 500 ms VGS=10V, ID=500mA 0.5 3.75 V VGS=5V, ID=50mA 0.05 0.375 V IS=115mA, VGS=0 V 0.55 1.2 V Drain-Source Breakdown Voltage Gate-Threshold Voltage Forward Trans conductance Drain-source on-voltage V(BR)DSS gfs VDS(on) Diode Forward Voltage VSD Input Capacitance Ciss Output Capacitance COSS Reverse Transfer Capacitance CrSS V 2.5 ±80 nA 80 nA mA Ω 50 VDS=25V, VGS=0V, f=1MHz 25 pF 5 SWITCHING TIME Turn-on Time td(on) Turn-off Time td(off) 08/04/2007 Rev.1.00 VDD=25 V, RL=50Ω ID=500mA,VGEN=10 V RG=25 Ω www.SiliconStandard.com 20 40 ns 2 2N7002 TYPICAL CHARACTERISTICS Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 08/04/2007 Rev.1.00 www.SiliconStandard.com 3