SSM70T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
30V
R DS(ON)
9mΩ
ID
60A
DESCRIPTION
The SSM70T03 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM70T03GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
The through-hole version, the SSM70T03GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating
of 175°C for improved thermal margin and reliability.
G D
S
D
S
TO-251 (suffix J)
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VDS
Drain-source voltage
30
V
VGS
Gate-source voltage
±20
V
ID
Continuous drain current, TC = 25°C
60
A
43
A
195
A
53
W
0.36
W/°C
29
mJ
TC = 100°C
1
IDM
Pulsed drain current
PD
Total power dissipation, TC = 25°C
Linear derating factor
3
EAS
Single pulse avalanche energy
TSTG
Storage temperature range
-55 to 175
°C
TJ
Operating junction temperature range
-55 to 175
°C
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Units
RΘ JC
Maximum thermal resistance, junction-case
2.8
°C/W
RΘ JA
Maximum thermal resistance, junction-ambient
110
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25Ω , IAS=24A.
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SSM70T03GH,J
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
BVDSS
Drain-source breakdown voltage
∆ BV DSS/∆ T j
Breakdown voltage temperature coefficient
RDS(ON)
Static drain-source on-resistance
Test Conditions
Min.
VGS=0V, ID=250uA
30
Reference to 25°C, ID=1mA
-
Typ. Max. Units
-
-
V
0.032
-
V/°C
VGS=10V, ID=33A
-
-
9
mΩ
VGS=4.5V, ID=20A
-
-
18
mΩ
Gate threshold voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward transconductance
VDS=10V, ID=33A
-
35
-
S
IDSS
Drain-source leakage current
VGS(th)
IGSS
Gate-source leakage current
2
VDS=30V, VGS=0V
-
-
1
uA
VDS=24V ,VGS=0V, Tj=175°C
-
-
250
uA
VGS= ±20V
-
-
±100
nA
ID=33A
-
16.5
-
nC
Qg
Total gate charge
Qgs
Gate-source charge
VDS=20V
-
5
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=4.5V
-
10.3
-
nC
VDS=15V
-
8.2
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=33A
-
105
-
ns
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
-
21.4
-
ns
tf
Fall time
RD=0.45Ω
-
8.5
-
ns
Ciss
Input capacitance
VGS=0V
-
1485
-
pF
Coss
Output capacitance
VDS=25V
-
245
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
170
-
pF
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward voltage
2
trr
Reverse-recovery time
Qrr
Reverse-recovery charge
Test Conditions
Min.
Typ. Max. Units
IS=60A, VGS=0V
-
-
1.3
V
IS=30A, VGS=0V,
-
29
-
ns
dI/dt=100A/µs
-
12
-
nC
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25Ω , IAS=24A.
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SSM70T03GH,J
120
200
o
T C =25 C
90
ID , Drain Current (A)
150
ID , Drain Current (A)
10V
8.0V
6.0V
T C =175 o C
10V
8.0V
6.0V
100
V GS =4.0V
50
60
V GS =4.0V
30
0
0
0.0
1.5
3.0
0.0
4.5
1.5
V DS , Drain-to-Source Voltage (V)
3.0
4.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
60
I D =33A
T C =25°C
I D =33A
V GS =10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
40
20
1.2
0.8
0.4
0
0
4
8
12
-50
16
25
T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
100
2
VGS(th) (V)
2.5
IS(A)
1000
Tj=175 o C
Tj=25 o C
1
1.5
1
0.1
0.5
0
0.5
1
1.5
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
10/16/2005 Rev.3.1
175
o
V GS , Gate-to-Source Voltage (V)
10
100
-50
25
100
T j , Junction Temperature (
175
o
C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM70T03GH,J
12
f=1.0MHz
10000
V DS =16V
V DS =20V
V DS =24V
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =33A
6
C iss
1000
C oss
C rss
3
100
0
0
10
20
1
30
8
15
22
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
10us
ID (A)
100
100us
10
1ms
T C =25 o C
Single Pulse
10ms
100ms
DC
1
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) t
Fig 11. Switching Time Waveform
10/16/2005 Rev.3.1
Charge
f
Q
Fig 12. Gate Charge Waveform
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SSM70T03GH,J
PHYSICAL DIMENSIONS
A
E
H
e
SEE VIEW B
MIN.
MAX.
1.80
2.80
A1
0.00
0.13
b
0.40
1.00
b3
4.80
5.90
c
0.35
0.65
b
c
BASE METAL
SECTION A-A
θ
SEATING PLANE
L1
0.40
0.89
5.10
6.30
E
6.00
7.00
2.30 BSC
H
7.80
11.05
L
1.00
2.55
L1
2.20
3.05
L2
0.35
0.65
L3
0.50
2.03
L4
0.50
1.20
θ
0°
8°
A1
L2
L
c2
D
e
WITH PLATING
GAUGE PLANE
MILLIMETERS
A
L3
D
L4
A
A
TO-252-3L
S
Y
M
B
O
L
c2
b3
VIEW B
*Dimensions do not include mold protrusions.
PART MARKING
PART NUMBER: 70T03GH or 70T03GJ
XXXXXX
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
YWWSSS
PACKING: Moisture sensitivity level MSL3
TO-252: 3000 pcs in antistatic tape on a reel packed inside a moisture barrier bag (MBB).
TO-251: 1000pcs in an antistatic bag packed inside a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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