SSM1333GU
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
-20V
R DS(ON)
600mΩ
ID
-550mA
DESCRIPTION
The SSM1333GU acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as drivers,
high-side line and general load-switching circuits.
Pb-free; RoHS-compliant SOT-323/SC-70
D
The SSM1333GU is supplied in an RoHS-compliant
SOT-323/SC-70 package, which is widely used for
low power commercial and industrial surface mount
applications.
S
SOT-323/SC-70
G
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
IDM
PD
Continuous drain current
Pulsed drain current
3
,
Value
Units
-20
V
± 12
V
T A = 25°C
-550
mA
TA = 70°C
-440
mA
-2.5
A
0.35
W
0.003
W/°C
1,2
3
Total power dissipation , TA = 25°C
Linear derating factor
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
Units
360
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on FR4 board, t < 10 sec.
11/26/2005 Rev.3.01
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SSM1333GU
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
-
0.01
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-550mA
-
-
600
mΩ
VGS=-4.5V, ID=-500mA
-
-
800
mΩ
VGS=-2.5V, ID=-300mA
-
-
1000
mΩ
VGS=0V, ID=-250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
-1.2
V
gfs
Forward Transconductance
VDS=-5V, ID=-500mA
-
1
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
VDS=-16V ,VGS=0V, Tj=70°C
-
-
-10
uA
VGS=±12V
-
-
±100
nA
ID=-500mA
-
1.7
2.7
nC
IGSS
Gate-Source Leakage
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
0.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
0.4
-
nC
VDS=-10V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-500mA
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=-5V
-
10
-
ns
tf
Fall Time
RD=20Ω
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
66
105.6
pF
Coss
Output Capacitance
VDS=-10V
-
25
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Min.
Typ.
Max.
Unit
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=-300mA, VGS=0V
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
11/26/2005 Rev.3.01
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SSM1333GU
2.5
2.5
- 5.0V
- 4.5V
- 3.5V
T A =25 C
-ID , Drain Current (A)
2.0
1.5
2.0
-3.5V
- 2.5V
1.0
V G = - 2.0V
1.5
-2.5V
1.0
V G = - 2.0V
0.5
0.5
0.0
0.0
0.0
0.5
1.0
1.5
2.0
0.0
2.5
0.5
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical output characteristics
Fig 2. Typical output characteristics
1.6
1400
I D = - 0. 3 A
1200
I D = - 0. 5 A
V G = - 4.5V
1.4
Normalized RDS(ON)
T A =25 o C
1000
RDS(ON) (mΩ )
-5.0V
-4.5V
T A = 150 o C
-ID , Drain Current (A)
o
800
600
1.2
1.0
0.8
400
200
0.6
1
4
7
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-resistance vs. gate voltage
Fig 4. Normalized on-resistance
vs. junction temperature
1.0
2.0
0.8
Normalized -VGS(th) (V)
1.5
0.6
-IS(A)
T j =150 o C
T j =25 o C
0.4
1.0
0.5
0.2
0.0
0.0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward characteristics of
the reverse diode
11/26/2005 Rev.3.01
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate threshold voltage vs.
junction temperature
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SSM1333GU
f=1.0MHz
100
I D =-0.5A
V DS =-16V
10
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C oss
4
C rss
2
0
10
0
1
2
3
4
1
3
Q G , Total Gate Charge (nC)
5
7
9
11
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate charge characteristics
Fig 8. Typical capacitance characteristics
10
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
-ID (A)
1
1ms
0.1
10ms
100ms
DC
o
T A =25 C
Single Pulse
0.01
0.2
0.1
0.05
0.1
0.02
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum safe operating area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective transient thermal impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching time waveform
11/26/2005 Rev.3.01
Charge
Q
Fig 12. Gate charge waveform
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SSM1333GU
PHYSICAL DIMENSIONS
SOT-23-3
SOT-23-3
SYMBOL MILLIMETERS
MIN.
MAX.
A
0.89
1.45
A1
0
0.15
A2
0.70
1.30
b
0.30
0.50
c
0.08
0.25
D
2.65
3.10
E
2.10
3.00
E1
1.19
2.30
e
0.95BSC
e1
1.90BSC
L
0.30
L1
Θ
0.60
0.60REF
0°
8°
*Dimensions do not include mold protrusions.
PART MARKING
PART NUMBER CODE: ND = SSM2310GN
NDXX
XX = DATE/LOT CODE
For a detailed explanation of these
codes, please contact SSC directly.
PACKING: Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a reel packed in a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
11/26/2005 Rev.3.01
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