SSM04N70BGF-A
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
650V
R DS(ON)
2.4Ω
ID
4A
DESCRIPTION
The SSM04N70BGF-A achieves fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for high voltage applications such as AC/DC
converters, SMPS and general off-line switching circuits.
Pb-free; RoHS-compliant TO-220FM
The SSM04N70BGF-A is in TO-220FM for through-hole
mounting where a small footprint is required on the board,
and/or an external heatsink is to be attached.
G
D
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
S
TO-220FM (suffix I)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VDS
Drain-source voltage
650
V
VGS
Gate-source voltage
±30
V
ID
Continuous drain current, TC = 25°C
4
A
2.5
A
15
A
33
W
0.26
W/°C
100
mJ
TC = 100°C
1
IDM
Pulsed drain current
PD
Total power dissipation, TC = 25°C
Linear derating factor
3
EAS
Single pulse avalanche energy
IAR
Avalanche current
4
A
EAR
Repetitive avalanche energy
4
mJ
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Units
RΘ JC
Maximum thermal resistance, junction-case
3.8
°C/W
RΘ JA
Maximum thermal resistance, junction-ambient
65
°C/W
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
3. Starting Tj = 25°C, VDD=50V , L=25mH , RG=25Ω , IAS= 4A.
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SSM04N70BGF-A
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
650
-
-
V
-
V/°C
BVDSS
Drain-source breakdown voltage
VGS=0V, ID= 1mA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.6
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=2A
-
-
2.4
Ω
VGS(th)
Gate threshold voltage
VDS=VGS, ID=250uA
2
-
4
V
-
S
gfs
Forward transconductance
VDS=20V, ID=1A
-
2.5
IDSS
Drain-source leakage current
VDS=600V, VGS=0V
-
-
10
uA
VDS=480V ,VGS=0V, Tj = 150°C
-
-
100
uA
VGS=±30V
-
-
±100
nA
ID=4A
-
16.7
-
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=480V
-
4.1
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=10V
-
4.9
-
nC
VDS=300V
-
11
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=4A
-
8.3
-
ns
td(off)
Turn-off delay time
RG=10Ω , VGS=10V
-
23.8
-
ns
tf
Fall time
RD=75Ω
-
8.2
-
ns
Ciss
Input capacitance
VGS=0V
-
950
-
pF
Coss
Output capacitance
VDS=25V
-
65
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
IS= 4A, VGS=0V
-
-
1.5
V
VD=VG=0V , VS=1.3V
-
-
4
A
-
-
15
A
Source-Drain Diode
Symbol
Parameter
Test Conditions
2
VSD
Forward voltage
IS
Continuous source current (body diode)
I SM
Pulsed source current (body
diode)1
Max. Units
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
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SSM04N70BGF-A
1.8
2.5
10V
6.0V
5.0V
ID , Drain Current (A)
T C =150 o C
ID , Drain Current (A)
T C =25 o C
2
1.5
4.5V
1
10V
6.0V
5.0V
1.2
4.5V
0.6
4.0V
0.5
V G =3.5V
V G =4.0V
0
0
0
2
4
6
0
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
9
12
Fig 2. Typical Output Characteristics
3
1.2
I D =2A
V G =10V
Normalized RDS(ON)
1.1
Normalized BVDSS (V)
3
V DS , Drain-to-Source Voltage (V)
1
2
1
0.9
0.8
0
-50
0
50
100
150
-50
0
o
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
Fig 3. Normalized BV DSS vs. Junction
Fig 4. Normalized On-Resistance
Temperature
vs. Junction Temperature
100
5
4
IS (A)
T j =150 o C
VGS(th) (V)
10
T j = 25 o C
3
1
2
0.1
1
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
Fig 5. Forward Characteristic of
Reverse Diode
9/12/2006 Rev.3.1
50
100
150
T j , Junction Temperature ( o C )
V SD (V)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM04N70BGF-A
f=1.0MHz
16
10000
12
C iss
V DS =320V
V DS =400V
V DS =480V
C (pF)
VGS , Gate to Source Voltage (V)
I D =4A
8
100
C oss
4
C rss
0
1
0
5
10
15
20
1
25
6
Q G , Total Gate Charge (nC)
11
16
21
26
31
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
ID (A)
10us
100us
1
1ms
10ms
100ms
0.1
T c =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
V DS (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedanc
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
9/12/2006 Rev.3.1
Charge
Q
Fig 12. Gate Charge Waveform
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SSM04N70BGF-A
PHYSICAL DIMENSIONS - TO-220FM
E
A
c1
E1
Millimeters
SYMBOLS
MIN
c2
φ
L5
L4
L1
L4
L3
L3
A1
b1
L
NOM
MAX
A
4.25
4.45
4.65
A1
2.30
2.50
2.70
b
b1
c
c1
c2
0.60
0.70
0.80
1.00
1.20
1.40
0.40
0.50
0.60
2.30
2.50
2.70
2.60
2.80
3.00
E
9.70
10.00
10.30
E1
6.70
7.00
7.30
e
----
2.54
----
L
13.00
14.00
15.00
L1
11.70
12.00
12.30
L3
14.90
15.20
15.50
L4
16.70
17.00
17.30
φ
----
3.20
----
1. All dimensions are in millimeters.
c
b
2. Dimensions do not include mold protrusions.
e
PART MARKING - TO-220FM
PACKING:
Moisture sensitivity level MSL3
1000pcs in tubes packed inside a
moisture barrier bag (MBB).
04N70BF-A
PART NUMBER: 04N70BF-A = SSM04N70BGF-A
YWWSSS
DATE/LOT CODE:
Y = last digit of the year
WW = work week (01 -> 52)
SSS = lot code sequence
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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