SSM9408GH
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
D
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
BVDSS
30V
RDS(ON)
10mΩ
57A
ID
G
S
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM9408GH) are available for low-profile applications.
G
D
Pb-free; RoHS-compliant
TO-251(J)
S
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current
57
A
ID@TC=100℃
Continuous Drain Current
41
A
228
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
53.6
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
THERMAL DATA
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
02/21/2008 Rev.1.00
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1
SSM9408GH
ELECTRICAL CHARACTERISTICS
o
(TJ=25 C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=30A
-
-
10
mΩ
VGS=4.5V, ID=20A
-
-
12
mΩ
VDS=VGS, ID=250uA
1
-
2.5
V
VDS=10V, ID=30A
-
30
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=175 C)
VDS=24V, VGS=0V
-
-
500
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=10A
-
13
21
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
o
Drain-Source Leakage Current (T j=25 C)
o
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=15Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
860
1380
pF
Coss
Output Capacitance
VDS=25V
-
210
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
IS=10A, VGS=0V,
-
23
-
ns
dI/dt=100A/µs
-
17
-
nC
SOURCE-DRAIN DIODE
Symbol
Parameter
Test Conditions
2
VSD
Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
02/21/2008 Rev.1.00
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2
SSM9408GH
120
100
10V
7 .0V
5.0V
4.5 V
80
80
V G = 3.0 V
60
40
ID , Drain Current (A)
100
ID , Drain Current (A)
T C =175 o C
10V
7.0 V
5.0V
4.5 V
o
T C =25 C
V G =3.0V
60
40
20
20
0
0
0.0
1.0
2.0
3.0
4.0
0.0
2.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6.0
8.0
Fig 2. Typical Output Characteristics
2.0
14
I D =20A
I D =30A
V G =10V
o
T C =25 C
1.6
Normalized RDS(ON)
12
RDS(ON) (mΩ)
4.0
V DS , Drain-to-Source Voltage (V)
10
1.2
0.8
8
0.4
6
2
4
6
8
-50
10
0
50
100
150
200
o
T j , Junction Temperature ( C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
30
Normalized VGS(th) (V)
1.2
20
T j =175 o C
IS(A)
T j =25 o C
10
0.8
0.4
0
0.0
0
0.4
0.8
1.2
-50
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
02/21/2008 Rev.1.00
0
50
100
150
200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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SSM9408GH
f=1.0MHz
10000
I D =10A
12
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
1000
C iss
4
C oss
C rss
100
0
0
10
20
1
30
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
ID (A)
100us
10
1ms
10ms
100ms
DC
o
1
T C =25 C
Single Pulse
0
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V DS =5V
VG
ID , Drain Current (A)
100
T j =25 o C
T j =175 o C
QG
80
4.5V
QGS
60
QGD
40
20
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
02/21/2008 Rev.1.00
Fig 12. Gate Charge Waveform
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SSM9408GH
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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