SSM4800AGM
N-Channel Enhancement Mode
PPower Mosfet
PRODUCT SUMMARY
P
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
RoHS Compliant
D
D
D
D
G
BVDSS
RDS(ON)
30V
18mΩ
ID
9.4A
S
SO-8
S
S
DESCRIPTION
D
The Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
±25
V
3
9.4
A
3
7.5
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
40
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL
Thermal DATA
Data
Symbol
Rthj-a
02/09/2007 Rev.1.00
D
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
Unit
50
℃/W
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2
SSM4800AGM
ELECTRICAL CHARACTERISTICS
o
J
Electrical
Characteristics@Tj=25oC(unless otherwise specified)
@T = 25 C ( unless otherwise specified )
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=9A
-
14
18
mΩ
VGS=4.5V, ID=7A
-
18
30
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=9A
-
16
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=9A
-
7
12
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS(th)
IGSS
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.5
-
nC
VDS=15V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=15Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
670
pF
Coss
Output Capacitance
VDS=25V
-
210
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.5
5
Ω
Min.
Typ.
SOURCE-DRAIN
DIODE
Source-Drain Diode
Symbol
Parameter
Test Conditions
2
Max. Units
VSD
Forward On Voltage
IS=1.9A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=9A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125oC/W when mounted on Min. copper pad.
02/09/2007 Rev.1.00
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2
SSM4800AGM
50
50
10V
7.0 V
5.0 V
4.5 V
T A =25 C
ID , Drain Current (A)
40
40
30
V G = 3.0 V
20
10
30
V G = 3.0 V
20
10
0
0
0
2
4
0
6
V DS , Drain-to-Source Voltage (V)
2
4
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
37
ID=9A
V G =10V
ID=7A
T A =25 ℃
Normalized RDS(ON)
32
RDS(ON) (mΩ)
10V
7.0 V
5.0 V
4.5 V
o
T A = 150 C
ID , Drain Current (A)
o
27
22
1.4
1.0
17
12
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.4
8
Normalized VGS(th) (V)
1.2
IS(A)
6
T j =150 o C
T j =25 o C
4
2
1.0
0.8
0.6
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
02/09/2007 Rev.1.00
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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3
SSM4800AGM
AP4800AGM
f=1.0MHz
1000
16
C iss
V DS = 25 V
V DS = 20 V
V DS = 15 V
12
C oss
C (pF)
VGS , Gate to Source Voltage (V)
ID=9A
8
100
C rss
4
0
10
0
5
10
15
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthia=125 ℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
VG
V DS =5V
ID , Drain Current (A)
QG
40
o
4.5V
o
T j =25 C
T j =125 C
QGS
QGD
20
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
02/09/2007 Rev.1.00
Fig 12. Gate Charge Waveform
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SSM4800AGM
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
02/09/2007 Rev.1.00
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