STANSON M04N60

N Channel MOSFET
M04N60
4.0A
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
TO-220
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETERS
SYMBOL
Continuous Drain Current
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
MIN
TYP
ID
V(BR)DSS
MAX
UNITS
CONDITION
3.6
A
VGS =10 V, Ta=25℃
V
VGS = 0 V, ID = 250 μA
mA
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125℃
Vgsf = 20 V, VDS = 0 V
600
IDSS
0.1
0.5
Gate-Source Leakage Current-Forward
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
IGSSR
100
nA
Vgsr = 20 V, VDS = 0 V
Gate Threshold Voltage
VGS(th)
4.0
V
VDS = VGS, ID = 250 μA
Static Drain-Source On-Resistance
RDS(on)
2.2
Ω
VGS = 10 V, ID = 2.2A *
S
VDS = 50 V, ID = 2.2A *
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
2.0
Forward Transconductance
gFS
2.5
Input Capacitance
Ciss
660
Output Capacitance
Coss
86
pF
pF
Reverse Transfer Capacitance
Crss
19
pF
Turn-On Delay Time
td(on)
11
tr
13
ns
ns
td(off)
35
ns
Fall Time
tf
14
Total Gate Charge
Qg
31
Gate-Source Charge
Qgs
4.6
nC
nC
Gate-Drain Charge
Qgd
17
nC
Internal Drain Inductance
LD
4.5
nH
Measured from the drain lead 0.25” from package to
center of die
Internal Drain Inductance
LS
7.5
nH
Measured from the source lead 0.25” from package
to source bond pad
Rise Time
Turn-Off Delay Time
ns
Total Power Dispation
PD
74
W
Thermal Resistance – Junction to Case
θJC
1.7
℃/W
℃
Operating and Storage Temperature
TJ, TSTG
-55
VDD = 300 V, ID =3.6 A, VGS = 10 V,
RG = 12Ω *
150
VDS = 360 V, ID = 3.6 A, VGS = 10 V *
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
VSD
Forward Turn-On Time
ton
**
1.6
ns
V
Reverse Recovery Time
trr
370
ns
IS = 3.6 A, VGS = 0 V, dIS/dt = 100A/µs
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295