JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N60 N-Channel Power MOSFET TO-92 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. 1. GATE 2. DRAIN 3. SOURCE FEATURES z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized for Use in Bridge Circuits z IDSS and VDS(on) Specified at Elevated Temperature Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current ID 1 Pulsed Drain Current IDM 9 Power Dissipation PD 0.625 Single Pulsed Avalanche Energy* EAS 20 mJ Thermal Resistance from Junction to Ambient RthJA 200 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 V A W ℃ *EAS condition: Tj=25℃,VDD=100V,VGS=10V,L=10mH,IAS=2A,RG=25Ω C,Nov,2012 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Drain-Source Breakdown Voltage Symbol Test Condition Min Typ Max Units V(BR) DSS VGS = 0V, ID =250µA 600 VGS(th) VDS =VGS, ID =250µA 2.0 Gate-Body Leakage Current (note1) IGSS VDS =0V, VGS =±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS =600V, VGS =0V 0.10 µA 10 Ω Gate-Threshold Voltage (note1) Drain-Source On-State Resistance (note1) RDS(on) VGS =10V, ID =0.6A Forward Transconductance (note1) gFS VDS =50V, ID =0.5A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Forward on Voltage(note1) VDS =25V,VGS =0V, f =1MHz 4.0 0.5 S 210 pF 28 4.2 8 tr VDD=300V,ID=1A, 21 td(off) VGS=10V,RG=18Ω 18 tf VSD V nS 24 VGS =0V, IS=1A 1.5 V Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. C,Nov,2012 Typical Characteristics CJV01N60 Output Characteristics Transfer Characteristics 1.75 1.25 Ta=25℃ VDS=50V VGS=12V,10V,8V,6V,5.5V Pulsed Pulsed 1.50 (A) ID ID (A) 1.00 VGS=5V 1.25 DRAIN CURRENT DRAIN CURRENT 0.75 1.00 0.75 VGS=4.5V 0.50 Ta=25℃ Ta=100℃ 0.50 0.25 0.25 VGS=4V 0.00 0.00 0 5 10 15 20 DRAIN TO SOURCE VOLTAGE VDS 25 0 1 (V) 2 3 4 GATE TO SOURCE VOLTAGE 5 VGS 6 (V) RDS(ON) —— ID RDS(ON) —— VGS 30 50 Ta=25℃ Ta=25℃ Pulsed Pulsed 25 RDS(ON) 30 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( Ω) ( Ω) 40 20 ID=0.6A 20 15 VGS=10V 10 10 5 0 0 2 4 6 GATE TO SOURCE VOLTAGE 8 VGS 0 0.0 10 0.4 0.8 DRAIN CURRENT (V) 1.2 ID 1.6 2.0 2.0 2.5 (A) IS —— VSD Threshold Voltage 3.0 9 Ta=25℃ Pulsed IS (A) 2.6 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) 2.8 ID=250uA 2.4 2.2 1 0.1 2.0 1.8 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 125 0.01 0.0 0.5 1.0 1.5 SOURCE TO DRAIN VOLTAGE VSD (V) C,Nov,2012