FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential. • Low saturation voltage: VCE(sat), Typ = 1.1 V@ IC = 40A • High Input Impedance C G TO-3P G C E E Absolute Maximum Rating TC = 25oC unless otherwise noted Symbol Description FGA180N30D Units VCES Collector-Emitter Voltage 300 V VGES Gate-Emitter Voltage ± 30 V @ TC = 25°C 180 A @ TC = 25°C 450 A IC Collector Current ICM Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD (Note 1) @ TC = 100°C 10 A 40 A Maximum Power Dissipation @ TC = 25°C 480 W Maximum Power Dissipation @ TC = 100°C 192 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range 300 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Notes: (1) Repetitive test , pulse width = 100usec , Duty = 0.5 * Ic_pulse limited by max Tj Thermal Characteristics Typ. Max. Units RθJC Symbol Thermal Resistance, Junction-to-Case for IGBT Parameter -- 0.26 °C/W RθJC Thermal Resistance, Junction-to-Case for Diode -- 1.56 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ©2006 Fairchild Semiconductor Corporation FGA180N30D Rev. A 1 www.fairchildsemi.com FGA180N30D 300V PDP IGBT June 2006 Device Marking Device Package Reel Size Tape Width Quantity FGA180N30D FGA180N30D TO-3P -- -- 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units V Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250µA 300 -- -- ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA -- 0.6 -- ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 100 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA 2.5 4.0 5.0 V V/°C On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V -- 1.1 1.4 V IC = 180A, VGE = 15V, TC = 25°C -- 1.9 -- V IC = 180A, VGE = 15V, TC = 125°C -- 2.0 -- V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 3420 -- pF -- 520 -- pF -- 150 -- pF -- 30 -- ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VCC = 200V, IC = 40A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25°C -- 210 -- ns -- 100 -- ns tf Fall Time -- 140 300 ns Eon Turn-On Switching Loss -- 0.26 -- mJ Eoff Turn-Off Switching Loss -- 0.75 -- mJ Ets Total Switching Loss -- 1.01 -- mJ td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Eon Eoff -- 30 -- ns -- 230 -- ns -- 110 -- ns -- 220 -- ns Turn-On Switching Loss -- 0.27 -- mJ Turn-Off Switching Loss -- 1.0 -- mJ -- 1.27 -- mJ -- 185 277 nC -- 24 36 nC -- 88 132 nC Ets Total Switching Loss Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 200V, IC = 40A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125°C VCE = 200V, IC = 40A, VGE = 15V 2 FGA180N30D Rev. A www.fairchildsemi.com FGA180N30D 300V PDP IGBT Package Marking and Ordering Information Symbol Parameter Test Conditions VFM Diode Forward Voltage IF = 10A trr Diode Reverse Recovery Time IF = 10A dI/dt = 200A/µs Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge 3 FGA180N30D Rev. A Min. Typ. Max. Units TC = 25°C -- 1.1 1.4 V TC = 125°C -- 0.9 -- TC = 25°C -- 21 -- TC = 125°C -- 35 -- TC = 25°C -- 2.8 -- TC = 125°C -- 5.6 -- TC = 25°C -- 29.4 -- TC = 125°C -- 98 -- ns A nC www.fairchildsemi.com FGA180N30D 300V PDP IGBT Electrical Characteristics of DIODE TC = 25°C unless otherwise noted Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 300 300 o T C = 25 C 15V 20V 15V 250 12V Collector Current, IC [A] 250 Collector Current, IC [A] o T C = 125 C 20V 10V 200 150 100 V G E = 8V 12V 10V 200 150 100 50 V GE = 8V 50 0 0 2 4 0 6 0 2 4 6 Collector-Emitter Voltage, V CE [V] C ollector-Em itter Voltage, V C E [V] Figure 3. Saturation Voltage Figure 4. Transfer Characteristics 180 Com m on Em itter V GE = 15V C om m on Em itter V G E = 15V TC = o 25 C Collector Current, IC [A] Collector Current, IC [A] 150 o T C = 125 C 120 90 60 100 TC = o 25 C o T C = 125 C 10 30 0 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 4 6 C ollector-Em itter Voltage, V C E [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 10 Figure 6. Saturation Voltage vs.VGE 6 3.0 Com m on Em itter V GE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 8 Gate-Emitter Voltage, V G E [V] 2.5 180A 2.0 90A 1.5 40A 1.0 IC = 20A 0.5 C om m on E m itter o T C = 25 C 5 4 180A 3 90A 2 40A 1 I C = 20A 0 0.0 25 50 75 100 0 125 o 4 FGA180N30D Rev. A 4 8 12 16 20 G a te-E m itte r V o ltag e , V G E [V ] Case Temperature, T C [ C ] www.fairchildsemi.com FGA180N30D 300V PDP IGBT Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics (Continued) Figure 7. Saturation Voltage vs.VGE Figure 8. Capacitance Characteristics 8000 C om m on Em itter o T C = 125 C C om m on Em itter V G E = 0V, f = 1M H z o T C = 25 C 5 Capacitance [pF] Collector-Emitter Voltage, VCE [V] 6 4 3 180A C ies 6000 C oes 4000 C res 2 90A 2000 40A 1 I C = 20A 0 0 0 4 8 12 16 0.1 20 1 Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics 600 C om m on Em itter R L = 5Ω 12 8 Vcc = 200V 6 4 1ms 10 DC Operation 1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 2 0 0.01 50 100 150 200 250 100 µ s Ic MAX (Continuous) 100 10 0 50 µ s Ic MAX (Pulsed) o T C = 25 C Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 15 14 30 10 C ollector-Em itter Voltage, V CE [V] G ate-Em itter Voltage, V G E [V] 0.1 G ate Charge, Q g [nC ] 1 10 100 1000 Collector - Emitter Voltage, V CE [V] Figure 11. Turn-On Characteristics vs. Gate Resistance Figure 12. Turn Off Characteristics vs. Gate Resistance 1000 2000 1000 Td(off) Switching Time [ns] Switching Time [ns] tr 100 Td(on) Com m on Em itter V CC = 200V, V GE = 15V I C = 40A tf 100 Comm on Emitter V CC = 200V, V GE = 15V I C = 40A o T C = 25 C o T C = 25 C o T C = 125 C o 10 10 0 10 20 30 40 0 50 10 20 30 40 50 G ate Resistance, R G [ Ω ] Gate Resistance, R G [ Ω ] 5 FGA180N30D Rev. A T C = 125 C www.fairchildsemi.com FGA180N30D 300V PDP IGBT Typical Performance Characteristics (Continued) Figure 13. Turn-On Characteristics vs. Collector Current Figure 14. Turn-Off Characteristics vs. Collector Current 1000 Com m on Em itter V CC = 200V V G E = 15V, R G = 5 Ω 1000 tr o T C = 25 C Switching Time [ns] Switching Time [ns] o T C = 125 C 100 Td(on) tf 100 Td(off) Com m on Em itter V CC = 200V V G E = 15V, R G = 5 Ω o T C = 25 C o T C = 125 C 10 10 0 20 40 60 80 100 120 140 160 0 180 20 40 C ollector C urrent, I C [A ] 60 80 100 120 140 160 180 C ollector C urrent, I C [A ] Figure 15. Switching Loss vs Gate Resistance Figure 16. Switching Loss vs Collector Current E off 1 Switching Loss [mJ] Switching Loss [mJ] 10 E on C om m on E m itter V C C = 200V , V GE = 15V I C = 40A E off 1 C om m on E m itter V C C = 200V V G E = 15V , R G = 5 Ω E on o o T C = 25 C T C = 25 C o o T C = 125 C T C = 125 C 0.1 0.1 0 10 20 30 40 50 0 G ate R esistance, R G [ Ω ] 20 40 60 80 100 120 140 160 180 C o lle cto r C u rre n t, I C [A ] Figure 17. Turn Off SOA Characteristics Collector Current, IC [A] 1000 100 10 Safe O perating Area o V GE = 20V, T C = 100 C 1 1 10 100 500 Collector-Emitter Voltage, V CE [V] 6 FGA180N30D Rev. A www.fairchildsemi.com FGA180N30D 300V PDP IGBT Typical Performance Characteristics FGA180N30D 300V PDP IGBT Typical Performance Characteristics (Continued) Figure 18. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.1 0.5 0.2 0.1 0.05 0.01 Pdm t1 0.02 t2 0.01 single pulse 1E-3 1E-5 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] Figure 19. Forward Characteristics Figure 20. Typical Reverse Recovery Current 5 100 I F = 10A o 10 Reverse Recovery Current , Irr [A] Forward Current , IF [A] T J = 125 C o T J = 25 C 1 o T C = 25 C o T C = 125 C 0.1 0.0 0.5 1.0 1.5 2.0 o T C = 25 C 4 3 2 1 0 100 2.5 Forw ard Voltage , V F [V] 500 di/dt [A/ µ s] Figure 21. Typical Reverse Recovery Time 36 Reverse Recovery Time , trr [ns] IF = 10A o Tc = 25 C 32 28 24 100 500 di/dt [A/µ s] 7 FGA180N30D Rev. A www.fairchildsemi.com 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters 8 FGA180N30D Rev. A www.fairchildsemi.com FGA180N30D 300V PDP IGBT TO-3PCapacitance CharacteristicsTurn-On Characteristics vs. Gate The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ Build it Now™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ I2C™ EcoSPARK™ 2 E CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 9 FGA180N30D Rev. A www.fairchildsemi.com FGA180N30D 300V PDP IGBT TRADEMARKS