FGA180N33ATD tm 330V, 180A PDP Trench IGBT Features General Description • High Current Capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.03V @ IC = 40A • High input impedance • RoHS compliant Applications • PDP SYSTEM C G TO-3P E G CE Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC IC pulse (1) PD Ratings Units 330 V ± 30 V Collector Current @ TC = 25oC 180 A Pulsed Collector Current @ TC = 25oC 450 A W o Maximum Power Dissipation @ TC = 25 C 390 Maximum Power Dissipation @ TC = 100oC 156 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Notes: 1: Repetitive test, pulse width = 100usec, Duty = 0.1 * IC_pulse limited by max Tj Thermal Characteristics Symbol RθJC(IGBT) Parameter Thermal Resistance, Junction to Case Typ. Max. - 0.32 o oC/W RθJC(Diode) Thermal Resistance, Junction to Case - 0.82 RθJA Thermal Resistance, Junction to Ambient - 40 ©2008 Fairchild Semiconductor Corporation FGA180N33ATD Rev. A 1 Units o C/W C/W www.fairchildsemi.com FGA180N33ATD 330V, 180A PDP Trench IGBT April 2008 Packaging Device Marking Device Package Type Qty per Tube Max Qty per Box FGA180N33ATD FGA180N33ATDTU TO-3P Tube 30ea - Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 400µA 330 - - V ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 400 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250uA, VCE = VGE 2.5 4.0 5.5 V IC = 40A, VGE = 15V - 1.1 1.4 V IC = 180A, VGE = 15V, - 1.68 - V IC = 180A, VGE = 15V TC = 125oC - 1.89 - 3880 - pF - 305 - pF - 180 - pF - 27 - ns - 80 - ns - 108 - ns - 180 240 ns - 26 - ns - 75 - ns On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGA180N33ATD Rev. A VCC = 200V, IC = 40A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 40A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 40A, VGE = 15V 2 - 112 - ns - 250 300 ns - 169 - nC - 22 - nC - 69 - nC www.fairchildsemi.com FGA180N33ATD 330V, 180A PDP Trench IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Cyrrent Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions IF = 20A Min. Typ. Max TC = 25oC - 1.2 1.6 TC = 125oC - 1.04 - TC = 25oC - 27 - - 39 - TC = 25oC - 3.5 - o TC = 125 C - 6.0 - TC = 25oC - 48 - o - 117 - TC = FGA180N33ATD Rev. A IF = 20A dI/dt = 200A/µs 125oC TC = 125 C 3 Units V ns A µC www.fairchildsemi.com FGA180N33ATD 330V, 180A PDP Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 200 200 o o Collector Current, IC [A] 20V TC = 125 C 10V 9V 20V 8V 150 Collector Current, IC [A] TC = 25 C 15V 12V 100 7V 50 10V 9V 150 8V 15V 12V 100 7V 50 VGE = 6V VGE = 6V 0 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 0 Figure 3. Typical Saturation Voltage Characteristics 200 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C 150 Collector Current, IC [A] Collector Current, IC [A] 6 Figure 4. Transfer Characteristics 200 o TC = 125 C 100 50 TC = 25 C 150 T = 125oC C 100 50 0 0 0 1 2 Collector-Emitter Voltage, VCE [V] 2 3 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Common Emitter 180A 1.5 90A 1.2 40A 0.9 o TC = 25 C 16 12 8 180A 90A 4 40A IC = 20A IC = 20A 0.6 25 0 50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C] FGA180N33ATD Rev. A 10 20 Common Emitter VGE = 15V 1.8 4 6 8 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 2.1 Collector-Emitter Voltage, VCE [V] 2 4 Collector-Emitter Voltage, VCE [V] 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA180N33ATD 330V, 180A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 6000 20 Common Emitter VGE = 0V, f = 1MHz Common Emitter o 16 Cies Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 12 8 180A TC = 25 C 4000 Coes 2000 90A 40A 4 Cres IC = 20A 0 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 1000 15 IC MAX (Pulse) Common Emitter TC = 25 C 10µs 12 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o VCC = 100V 200V 9 6 3 100 100µs 1ms 10ms 10 IC MAX (Continuous) DC Operation *Notes: 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 0 0 30 60 90 120 Gate Charge, Qg [nC] 150 1 180 Figure 11. Turn-on Characteristics vs. Gate Resistance 5000 Switching Time [ns] Switching Time [ns] tr Common Emitter VCC = 200V, VGE = 15V IC = 40A td(on) 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 500 100 10 100 Collector-Emitter Voltage, VCE [V] Common Emitter VCC = 200V, VGE = 15V IC = 40A o TC = 25 C o TC = 125 C td(off) 1000 tf o TC = 25 C 100 70 o TC = 125 C 10 0 20 40 60 80 0 100 Gate Resistance, RG [Ω] FGA180N33ATD Rev. A 5 20 40 60 80 Gate Resistance, RG [Ω] 100 www.fairchildsemi.com FGA180N33ATD 330V, 180A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 2000 1000 Common Emitter VGE = 15V, RG = 5Ω o TC = 25 C o TC = 125 C Switching Time [ns] tf Switching Time [ns] 1000 tr 100 td(off) Common Emitter VGE = 15V, RG = 5Ω o TC = 25 C o TC = 125 C td(on) 100 10 30 60 90 120 Collector Current, IC [A] 150 1 10 180 30 60 90 120 150 Collector Current, IC [A] 180 Figure 15. Turn off Switching SOA Characteristics Figure 16. Forward Characteristics 100 100 Forward Current, IF [A] Collector Current, IC [A] 500 10 o TJ = 25 C 10 o TJ = 125 C o TC = 25 C Safe Operating Area o o TC = 125 C VGE = 15V, TC = 125 C 1 1 10 100 Collector-Emitter Voltage, VCE [V] FGA180N33ATD Rev. A 1 0.0 400 6 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 www.fairchildsemi.com FGA180N33ATD 330V, 180A PDP Trench IGBT Typical Performance Characteristics Figure 17. Reverse Recovery Current Figure 18. Stored Charge 60 Stored Recovery Charge, Qrr [µC] Reverse Recovery Currnet, Irr [A] 4 200A/µs 3 2 di/dt = 100A/µs 200A/µs 50 40 30 di/dt = 100A/µs 20 10 1 5 10 15 20 25 30 Forward Current, IF [A] 35 40 35 40 5 10 15 20 25 30 Forward Current, IF [A] 35 40 Figure 19.Reverse Recovery Time Reverse Recovery Time, trr [ns] 40 di/dt = 100A/µs 30 200A/µs 20 10 5 10 15 20 25 30 Forward Current, IF [A] Figure 20.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 PDM 0.01 0.02 t1 0.01 t2 single pulse 1E-3 1E-5 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGA180N33ATD Rev. A 7 www.fairchildsemi.com FGA180N33ATD 330V, 180A PDP Trench IGBT Typical Performance Characteristics FGA180N33ATD 330V, 180A PDP Trench IGBT Mechanical Dimensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FGA180N33ATD Rev. A 8 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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