APTGF30TL601G VCES = 600V IC = 30A @ Tc = 80°C Three level inverter NPT IGBT Power Module Application • Solar converter • Uninterruptible Power Supplies Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant All multiple inputs and outputs must be shorted together 5/6 ; 9/10 Q1 to Q4 Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 600 42 30 100 ±20 140 Tj = 125°C 60A@500V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A March, 2009 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-9 APTGF30TL601G – Rev 0 Symbol VCES APTGF30TL601G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C Tj = 125°C T j = 25°C VGE =15V IC = 30A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Min Typ VGE = 0V VCE = 600V 1.7 2.0 2.2 4 Max 250 500 2.45 Unit µA V 6 400 V nA Max Unit Q1 to Q4 Dynamic Characteristics Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =30A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω VGE = 15V Tj = 125°C VBus = 400V IC = 30A Tj = 125°C RG = 6.8Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Junction to Case Thermal Resistance Min Typ 1350 193 120 99 10 60 30 12 80 pF nC ns 15 32 12 ns 90 21 0.3 mJ 0.8 135 A 0.9 °C/W March, 2009 Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time www.microsemi.com 2-9 APTGF30TL601G – Rev 0 Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) APTGF30TL601G CR1 to CR4 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current IF = 15A IF = 30A IF = 15A VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 15A VR = 400V IF = 15A VR = 400V Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Typ Max 25 500 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 15 2 2.5 1.6 20 105 21 Tj = 125°C 250 Tj = 125°C 0.24 Unit V µA A 2.4 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 2 °C/W Max Unit V CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current IF = 30A IF = 60A IF = 30A VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 400V IF = 30A VR = 400V Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Typ 25 500 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 30 1.8 2.2 1.5 25 160 35 Tj = 125°C 480 Tj = 125°C 0.6 µA A 2.2 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Max Unit V Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 Min 2500 -40 -40 -40 2.5 Typ 150 125 100 4.7 80 °C N.m g 3-9 APTGF30TL601G – Rev 0 Symbol VISOL TJ TSTG TC Torque Wt March, 2009 Thermal and package characteristics APTGF30TL601G SP1 Package outline (dimensions in mm) www.microsemi.com 4-9 APTGF30TL601G – Rev 0 March, 2009 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTGF30TL601G Q1 to Q4 Typical performance curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 50 250µs Pulse Test < 0.5% Duty cycle 50 Ic, Collector Current (A) 40 30 TJ=125°C TJ=25°C 20 10 250µs Pulse Test < 0.5% Duty cycle 37.5 TJ=25°C 25 TJ=125°C 12.5 0 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 60 40 TJ=125°C 20 TJ=25°C 0 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) VCE=120V IC = 30A TJ = 25°C 16 14 VCE=300V 12 VCE=480V 10 8 6 4 2 0 0 10 20 40 60 80 100 120 Gate Charge (nC) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 50 1.20 Ic, DC Collector Current (A) 1.10 1.00 0.90 0.80 25 50 75 100 40 30 20 10 0 125 TJ, Junction Temperature (°C) 25 50 75 100 125 150 TC, Case Temperature (°C) March, 2009 Collector to Emitter Breakdown Voltage (Normalized) Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 80 4 www.microsemi.com 5-9 APTGF30TL601G – Rev 0 Ic, Collector Current (A) 60 APTGF30TL601G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 50 40 VGE = 15V 30 Tj = 125°C VCE = 400V RG = 6.8Ω 20 10 0 10 20 30 40 50 60 125 100 VGE=15V, TJ=125°C VGE=15V, TJ=25°C 75 50 VCE = 400V RG = 6.8Ω 25 70 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 400V RG = 6.8Ω 30 40 50 60 70 40 30 20 20 Current Fall Time vs Collector Current 50 tf, Fall Time (ns) tr, Rise Time (ns) 50 40 10 ICE, Collector to Emitter Current (A) VGE=15V, TJ=125°C 30 TJ = 125°C 20 TJ = 25°C 10 10 0 0 VCE = 400V, VGE = 15V, RG = 6.8Ω 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 0.75 Eoff, Turn-off Energy Loss (mJ) TJ=125°C, VGE=15V 0.5 0.25 0 0 10 20 30 40 50 60 2 70 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 6.8Ω 1.5 TJ = 125°C 1 0.5 0 70 0 ICE, Collector to Emitter Current (A) 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 1 70 0.75 Eon, 30A 0.5 VCE = 400V VGE = 15V TJ= 125°C 0.25 60 50 40 30 March, 2009 Eoff, 30A IC, Collector Current (A) Switching Energy Losses (mJ) 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 20 10 0 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 100 200 300 400 500 600 VCE, Collector to Emitter Voltage (V) www.microsemi.com 6-9 APTGF30TL601G – Rev 0 Eon, Turn-On Energy Loss (mJ) Turn-On Energy Loss vs Collector Current 1 VCE = 400V RG = 6.8Ω 0 70 APTGF30TL601G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes 100 Cres 10 0 10 20 30 40 240 VCE = 400V D = 50% RG = 6.8Ω TJ = 125°C TC= 75°C 200 160 120 80 hard switching 40 0 0 50 VCE, Collector to Emitter Voltage (V) 10 20 30 40 50 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.9 0.7 0.4 0.2 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 March, 2009 0.6 www.microsemi.com 7-9 APTGF30TL601G – Rev 0 Thermal Impedance (°C/W) 1 APTGF30TL601G CR1 to CR4 Typical performance curve Forward Characteristic of diode 30 TJ=125°C IF (A) 20 10 TJ=25°C 0 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 Energy losses vs Collector Current Switching Energy Losses vs Gate Resistance 0.6 0.5 VCE = 400V VGE = 15V RG = 1Ω TJ = 125°C E (mJ) E (mJ) 0.4 VCE = 400V VGE =15V IC = 15A TJ = 125°C 0.375 0.2 0.25 0.125 0 0 10 20 30 0 40 0 1 2 3 Gate Resistance (ohms) IC (A) 4 2 0.9 1.5 0.7 1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com March, 2009 0.5 8-9 APTGF30TL601G – Rev 0 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2.5 APTGF30TL601G CR5 & CR6 Typical performance curve Forward Characteristic of diode 80 IF (A) 60 TJ=125°C 40 TJ=25°C 20 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 2.4 Switching Energy Losses vs Gate Resistance 1 0.75 0.75 0.5 E (mJ) E (mJ) Energy losses vs Collector Current 1 VCE = 400V VGE = 15V RG = 2.5Ω TJ = 125°C 0.25 20 40 60 VCE = 400V VGE =15V IC = 30A TJ = 125°C 0.25 0 0 0.5 0 80 0 2 4 6 8 Gate Resistance (ohms) IC (A) 10 1.2 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 March, 2009 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 9-9 APTGF30TL601G – Rev 0 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4